Author

Peter A. Barnes

Observed names: P. A. Barnes, P. Barnes, P.A Barnes, P.A. Barnes, Peter A Barnes, Peter Barnes

Institution: Clemson University

Observed institutions: AT&T (United States), Marshall Space Flight Center, University of Waterloo, Simon Fraser University, Alcatel-Lucent (France), Lockheed Missiles and Space Company (United States), Clemson University, Auburn University, RMIT University

OpenAlex ID: A5043610179

Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasers

1976 · Thomas L. Paoli, Peter A. Barnes · Applied Physics Letters · 129

Contact resistance measurements on p-type 6H-SiC

1993 · J. Crofton, P. A. Barnes, et al. · Applied Physics Letters · 125

Laser Induced Underwater Sparks

1968 · Peter A. Barnes, K. E. Rieckhoff · Applied Physics Letters · 116

Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxy

1978 · P. A. Barnes, A. Y. Cho · Applied Physics Letters · 87

Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers

1976 · P. Barnes, T. Paoli · IEEE Journal of Quantum Electronics · 87

Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy

2000 · William F. Seng, Peter A. Barnes · Materials Science and Engineering B · 64

CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

1981 · R. Nelson, R. Wilson, et al. · IEEE Journal of Quantum Electronics · 63

Ohmic contacts produced by laser-annealing Te-implanted GaAs

1978 · P. A. Barnes, H. J. Leamy, et al. · Applied Physics Letters · 63

Comparison of solid-state thermionic refrigeration with thermoelectric refrigeration

2001 · Marc D. Ulrich, Peter A. Barnes, et al. · Journal of Applied Physics · 61

Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

1996 · R. J. Shul, A. J. Howard, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 43

Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers

1980 · N.K. Dutta, R.J. Nelson, et al. · Electronics Letters · 42

Application of molecular-beam epitaxial layers to heterostructure lasers

1975 · H. Casey, A. Cho, et al. · IEEE Journal of Quantum Electronics · 40

Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy

1992 · Z. C. Feng, A. A. Allerman, et al. · Applied Physics Letters · 39

Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

1975 · F. R. Nash, R. W. Dixon, et al. · Applied Physics Letters · 38

High-output power InGaAsP (λ=1.3 μm) strip-buried heterostructure lasers

1980 · R. J. Nelson, P. D. Wright, et al. · Applied Physics Letters · 37

High rate electron cyclotron resonance etching of GaN, InN, and AlN

1995 · R. J. Shul, A. J. Howard, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 34

A nonalloyed, low specific resistance Ohmic contact to n-InP

1984 · W. C. Dautremont-Smith, P. A. Barnes, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 33

Alloyed tin-gold ohmic contacts to n-type indium phosphide

1981 · P.A. Barnes, R.S. Williams · Solid-State Electronics · 26

Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms

2002 · Marc D. Ulrich, William F. Seng, et al. · Journal of Computational Electronics · 25

Determination of substitutional dopant and hole concentrations in Zn-diffused single-crystal InP

1980 · R. S. Williams, P. A. Barnes, et al. · Applied Physics Letters · 25

Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy

2000 · William F Seng, Peter A Barnes · Materials Science and Engineering B · 23

Metallization Studies on Epitaxial 6H-SiC

1992 · J. Crofton, J. M. Ferrero, et al. · Springer proceedings in physics · 22

Current–voltage characteristics of a GaAs Schottky diode accounting for leakage paths

2000 · J. A. Ellis, P. A. Barnes · Applied Physics Letters · 21

Defect studies of electrothermal stress of InP metal-oxide-semiconductor structures

1989 · C. C. Tin, P. A. Barnes · Journal of Applied Physics · 21

Injection electroluminescence in metal-semiconductor tunnel diodes

1964 · P.C. Eastman, R.R. Haering, et al. · Solid-State Electronics · 19

Works count: 71

Citation count: 1,460

H-index: 22

I10-index: 30