Author

J. Carter

Observed name: J Carter

Institutions: RTX (United States), Raytheon (United States)

Observed institutions: RTX (United States), Raytheon (United States)

OpenAlex ID: A5043647705

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1− x N heterojunctions

1992 · M. Asif Khan, J. N. Kuznia, et al. · Applied Physics Letters · 254

Photoreflectance characterization of AlGaAs/GaAs modulation-doped heterostructures

1990 · N. Pan, X. L. Zheng, et al. · Journal of Applied Physics · 20

Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition

1993 · N. Pan, J. Carter, et al. · Applied Physics Letters · 13

Si delta-doped field-effect transistors by atmospheric pressure metalorganic chemical vapor deposition

1991 · N. Pan, J. Carter, et al. · Applied Physics Letters · 13

Atomic layer epitaxy of InP using trimethylindium and tertiarybutylphosphine

1993 · N. Pan, J. Carter, et al. · Thin Solid Films · 11

Inverted pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

1991 · N. Pan, J. Carter, et al. · Applied Physics Letters · 11

Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

1990 · N. Pan, J. Carter, et al. · Applied Physics Letters · 10

InAlAs/InP modulation doped heterostructures by atmospheric pressure metalorganic chemical vapor deposition using tertiarybutylphosphine

1992 · N. Pan, J. Carter, et al. · Applied Physics Letters · 4

Graded InGaP Schottky diodes on Si-doped InP

1992 · N. Pan, J. Carter, et al. · Applied Physics Letters · 4

Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

1992 · N. Pan, G. S. Jackson, et al. · Journal of Electronic Materials · 2

Si delta-doped FET by atmospheric pressure metalorganic chemical vapor deposition.

1990 · Pan N, J Carter, et al. · Institute of physics conference series/Institute of Physics conference series · 2

Si delta-doped In0.15Ga0.85As/GaAs strained quantum well by atmospheric pressure metalorganic chemical vapor deposition

1992 · N. Pan, J. Carter, et al. · Journal of Applied Physics · 1

Molecular-beam epitaxial growth of high quality, double channel AlGaAs/InGaAs pulse-doped pseudomorphic high electron mobility transistors

1992 · W. E. Hoke, P. S. Lyman, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Works count: 13

Citation count: 345

H-index: 7

I10-index: 7