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Junichi Sonoda
Observed names:
J. Sonoda,
純一 園田
Institution:
Stanley Electric (Japan)
Observed institutions:
University of California, Santa Barbara,
Stanley Electric (Japan),
University of California System
OpenAlex ID:
A5043909487
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010
·
Shuichiro Yamamoto
, Yuji Zhao
, et al.
·
Applied Physics Express
·
189
PDF
30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
2010
·
Yuji Zhao
, Junichi Sonoda
, et al.
·
Applied Physics Express
·
80
PDF
GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
2009
·
Alexander Sztein
, Hiroaki Ohta
, et al.
·
Applied Physics Express
·
66
PDF
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008
·
Hisashi Masui
, Junichi Sonoda
, et al.
·
Journal of Physics D Applied Physics
·
64
Substitution of oxygen by fluorine in the GdSr_2AlO_5:Ce^3+ phosphors: Gd_1−xSr_2+xAlO_5−xF_x solid solutions for solid state white lighting
2009
·
Won Bin Im
, Yoann Fourré
, et al.
·
Optics Express
·
44
Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates
2008
·
Kenneth J. Vampola
, Natalie N. Fellows
, et al.
·
physica status solidi (a)
·
32
Droop improvement in high current range on PSS-LEDs
2011
·
S. Tanaka
, Y. Zhao
, et al.
·
Electronics Letters
·
31
Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes
2012
·
Stuart E. Brinkley
, Christopher Lalau Keraly
, et al.
·
Applied Physics Express
·
25
PDF
Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
2010
·
Chih-Chien Pan
, Ingrid Koslow
, et al.
·
Japanese Journal of Applied Physics
·
18
PDF
High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate
2010
·
Ingrid L. Koslow
, Junichi Sonoda
, et al.
·
Japanese Journal of Applied Physics
·
13
PDF
Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates
2011
·
Po Shan Hsu
, Junichi Sonoda
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
7
High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure
2003
·
J.-H. Liang
, T. Maruyama
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
·
6
Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films
2009
·
Hisashi Masui
, Thiago Melo
, et al.
·
Journal of Electronic Materials
·
4
PDF
Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
2009
·
Hisashi Masui
, Junichi Sonoda
, et al.
·
Japanese Journal of Applied Physics
·
2
PDF
GaN系フォトニック結晶レーザ実現のためのMOVPE空孔形成法の検討 (電子部品・材料)
2018
·
朋朗 小泉
, 渓 江本
, et al.
·
IEICE technical report. Speech
Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers
2018
·
Tomoaki Koizumi
, Kei Emoto
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
Evaluation of Air-hole/GaN photonic-crystal band-edge resonator formed by MOVPE
2018
·
Kei Emoto
, Tomoaki Koizumi
, et al.
·
The Japan Society of Applied Physics
Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers (II)
2018
·
Tomoaki Koizumi
, Kei Emoto
, et al.
·
The Japan Society of Applied Physics
Investigation of GaN photonic crystal laser structures
2018
·
Kei Emoto
, Tomoaki Koizumi
, et al.
·
The Japan Society of Applied Physics
Temperature dependence of photo-luminescence due to self-trapped excitons in ITBr(I)
2005
·
Atsuhiro Fujii
, Hiroyuki Ueda
, et al.
20pPSA-40 TlBr(I)結晶の励起子発光の温度依存性(領域5ポスターセッション,領域5(光物性))
2005
·
純一 園田
, 奈未子 岡村
, et al.
·
日本物理学会講演概要集
TlBr(I) 結晶中における外因性自己束縛励起子
2004
·
浩之 上田
, 知茂 島本
, et al.
13pPSA-43 TlBr(I) 結晶の緩和励起子による発光特性 II(領域 5)
2004
·
浩之 上田
, 奈未子 岡村
, et al.
·
日本物理学会講演概要集
C-3-128 InGaAs/InGaAsP多重量子井戸構造を用いた0.9μm帯リッジ型SLD素子の2Gbit/s変調特性
2000
·
吉鎬 梁
, 剛 丸山
, et al.
·
電子情報通信学会ソサイエティ大会講演論文集
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Works count:
24
Citation count:
581
H-index:
10
I10-index:
10
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