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Helen L. Maynard

Design considerations for miniaturized PEM fuel cells
2002 · Jeremy P. Meyers, Helen L. Maynard · Journal of Power Sources · 211
Miniature fuel cells for portable power: Design considerations and challenges
2002 · Helen L. Maynard, Jeremy P. Meyers · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 128
The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length
2003 · J.M. Hergenrother, D. Monroe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 90
Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
1993 · J. Ding, J.-S. Jenq, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 73
Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology
2005 · F. Chen, K. Chanda, et al. · IEEE International Reliability Physics Symposium proceedings · 42
Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes
2016 · C.-N. Ni, K.V. Rao, et al. · Symposium on VLSI Technology · 38
Plasma etching of submicron devices: in situ monitoring and control by multi-wavelength ellipsometry
1998 · H.L. Maynard, N. Layadi, et al. · Thin Solid Films · 33
Multiwavelength ellipsometry for real-time process control of the plasma etching of patterned samples
1997 · Helen L. Maynard, Nacer Layadi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 26
Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor
2000 · Lee Berry, Helen Maynard, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 20
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Plasma characterization and process control diagnostics
1993 · N. Hershkowitz, H. L. Maynard · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 18
Metal stack etching using a helical resonator plasma
1996 · C. B. Labelle, H. L. Maynard, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 17
Experiments with back side gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool
1994 · J. A. Meyer, K. H. R. Kirmse, et al. · Applied Physics Letters · 17
Plasma Etching Endpointing by Monitoring Radio‐Frequency Power Systems with an Artificial Neural Network
1996 · Helen L. Maynard, Ed A. Rietman, et al. · Journal of The Electrochemical Society · 16
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Plasma doping of high aspect ratio structures
2014 · Deven Raj, Jun S. Lee, et al. · International Conference on Ion Implantation Technology · 10
Thin-film resistor fabrication for InP technology applications
2002 · R. F. Kopf, R. Melendes, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
Thin-film interferometry of patterned surfaces
1995 · Helen L. Maynard, Noah Hershkowitz · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma source
1996 · J. T. C. Lee, N. Layadi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 9
A plasma doping process for 3D finFET source/drain extensions
2014 · Cuiyang Wang, Shan Tang, et al. · International Conference on Ion Implantation Technology · 8
FinFET multi-Vt tuning with metal gate work function modulation by plasma doping
2014 · Keping Han, Jun Lee, et al. · International Workshop on Junction Technology · 7
Multiple gate oxide thickness for 2 GHz system-on-a-chip technologies
2002 · C.T. Liu, Y. Ma, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
All Dry Lithography: Applications of Plasma Polymerized Methylsilane as aSingle Layer Resist and Silicon Dioxide Precursor.
1995 · T. W. Weidman, O. Joubert, et al. · Journal of Photopolymer Science and Technology · 6
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Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application
2018 · Qiuxia Xu, Wei Zou, et al. · IEEE Transactions on Electron Devices · 5
Silicon: Carbon Source/Drain Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for Reduced Schottky-Barrier and Leakage
2009 · Shao Ming Koh, Wei-Jing Zhou, et al. · ECS Transactions · 4
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Characterization of hot N-type plasma doping (PLAD) implantation
2017 · Haoyu Li, Deven Raj, et al. · International Workshop on Junction Technology · 3
Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing
2008 · Helen Maynard, Christopher Hatem, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 3
Works count: 38
Citation count: 822
H-index: 13
I10-index: 16
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