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G. Pataut

High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz
1993 · C. Duvanaud, S. Dietsche, et al. · IEEE Microwave and Guided Wave Letters · 93
High efficiency free running class F oscillator
2002 · M. Prigent, R. Camiade, et al. · IEEE MTT-S International Microwave Symposium digest · 19
Low Noise Design of Dielectric Resonator FET Oscillators
1983 · M. Camiade, A. Bert, et al. · European Microwave Conference (EuMC) · 16
Design of high power-addecd efficiency FET amplifiers operating with very low drain bias voltages for use in mobile telephones at 1.7 GHz
1993 · S. Dietsche, C. Duvanaud, et al. · European Microwave Conference (EuMC) · 12
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
2007 · M. Bouya, D. Carisetti, et al. · Microelectronics Reliability · 10
X-band varactor tuned monolithic GaAs FET oscillators†
1988 · GERARD PATAUT, DIMITRIS PAVLIDIS · International Journal of Electronics · 9
Stability Analysis of Millimeter-Wave Circuits. Application to DC-40GHz PHEMT amplifier and Ku-band HBT power amplifier
2000 · M. Campovecchio, J.C. Nal, et al. · European Microwave Conference (EuMC) · 8
GaAs Monolithic Balanced Mixer for C Band Direct Demodulation Receiver
1989 · I. Telliez, P. Chaumas, et al. · European Microwave Conference (EuMC) · 8
Power HBT reliability for space applications
2003 · Auxemery, Ph., Pataut, G., et al. · AMS Acta (University of Bologna) · 4
Evaluation of P-HEMT MMIC technology PH25 for space applications
1999 · P. Huguet, P. Auxemery, et al. · Microelectronics Reliability · 4
Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects
1996 · H. Derewonko, A. Bosella, et al. · IEEE Transactions on Nuclear Science · 4
Space Evaluation of P-HEMT MMIC Process PH15
2000 · P. Huguet, P. Auxemery, et al. · ESASP · 2
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses
2001 · B. Lambert, N. Malbert, et al. · Microelectronics Reliability · 1
Distributed amplifier (DC–40 GHz) for high-speedoptical communications
2000 · F. Villain, M. Campovecchio, et al. · Electronics Letters · 1
A C-band direct demodulation MMIC receiver for digital communications systems
1990 · Pataut, G., Telliez, I., et al. · AMS Acta (University of Bologna) · 1
Techniques de détection de défauts dans les transistors à haute mobilité électronique AlGaN/GaN à contact Schottky Pt/Ti/Au
2007 · Moshine Bouya, Dominique Carisetti, et al. · HAL
Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications
2007 · H. Blanck, G. Jonsson, et al.
A new reliability mechanism observed on Al gate based PHEMT structure
2002 · Nicole Martin, E. Rogeaux, et al. · ESASP
Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects
2002 · H. Derewonko, A. Bosella, et al. · European Conference on Radiation and Its Effects on Components and Systems
Evidence of surface trap effects on pseudomorphic HEMT submitted to impact ionisation stresses
2002 · Malbert, N., Labat, N., et al.
Analysis of Lf Noise Evolution in Power Hemt After Dc Step Lifetests
2001 · BENOÎT LAMBERT, NATHALIE MALBERT, et al. · International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF)
Design and Realization of an Analog - Digital Monolithic Circuit for L-Band Phase Locked Loop
1994 · G. Pataut, P. Coquille, et al. · European Microwave Conference (EuMC)
Works count: 23
Citation count: 192
H-index: 8
I10-index: 5
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