Get started
Author

Takashi Imazawa

Observed name: T. Imazawa
Observed institution: Mitsubishi Electric (Japan)
ORCID: 0009-0002-8277-3930
Observed ORCID: 0009-0002-8277-3930
OpenAlex ID: A5048835659
Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing
2021 · T. Nanjo, H. Koyama, et al. · Electronics Letters · 9
PDF
Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer
2021 · Takuma Nanjo, Takashi Imazawa, et al. · Japanese Journal of Applied Physics · 6
PDF
Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures
2025 · Takuma Nanjo, Takashi Imazawa, et al. · Applied Physics Letters · 3
Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate
2023 · T. Nanjo, S. Yamamoto, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Behavior of hydrogen in amorphous silicon thin films
2013 · Takashi Imazawa · The Japan Society of Applied Physics
Works count: 5
Citation count: 20
H-index: 3
I10-index:
Year
Topic
Type