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Y.J. Park
Observed names:
Jong-Hyeok Park,
Y. J. Park,
Y.J Park,
Yeri Park
Institution:
Sangmyung University
Observed institutions:
Sangmyung University,
Korea Basic Science Institute,
Korean Association Of Science and Technology Studies,
Samsung Electronics (South Korea),
Korea Institute of Science and Technology
OpenAlex ID:
A5048867979
Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol–gel method
2003
·
Y.M. Kim
, M. Yoon
, et al.
·
Solid State Communications
·
132
Magnetic properties and microstructure of cobalt nanoparticles in a polymer film
2003
·
I.-W. Park
, M. Yoon
, et al.
·
Solid State Communications
·
42
Magnetic properties of iron nanoparticles in a polymer film
2003
·
M Yoon
, Y.M Kim
, et al.
·
Journal of Magnetism and Magnetic Materials
·
40
Superparamagnetic properties of nickel nanoparticles in an ion-exchange polymer film
2005
·
M. Yoon
, Y. Kim
, et al.
·
Materials Chemistry and Physics
·
38
Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film
2004
·
Y.J Park
, C.S Oh
, et al.
·
Journal of Crystal Growth
·
20
Superparamagnetism of transition metal nanoparticles in conducting polymer film
2004
·
M. Yoon
, Y. Kim
, et al.
·
Journal of Magnetism and Magnetic Materials
·
17
β-SiC Thin film growth using microwave plasma activated CH4-SiH4 sources
1999
·
H.S Kim
, Y.J Park
, et al.
·
Thin Solid Films
·
15
Diluted magnetic semiconductor of p-type InMnP:Zn epilayer
2005
·
Yoon Shon
, H.C. Jeon
, et al.
·
Journal of Crystal Growth
·
11
Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices
2004
·
J.D. Song
, Y.J. Park
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
9
Artificial array of InAs quantum dots on a strain-engineered superlattice
2004
·
K.M Kim
, Y.J Park
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
7
Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy
2006
·
J.H. Kim
, Y.J. Park
, et al.
·
Applied Surface Science
·
6
Effect of InxGa1−xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots
2005
·
J.G. Lim
, Y.J. Park
, et al.
·
Journal of Crystal Growth
·
6
Effects of Si-doped GaAs layer on optical properties of InAs quantum dots
2004
·
Y.M. Park
, Y.M. Park
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
6
Nuclear magnetic relaxation studies of 69Ga, 71Ga, and 75As nuclei in GaAs single crystals doped with paramagnetic impurities
1999
·
T.H Yeom
, I.G Kim
, et al.
·
Solid State Communications
·
6
Impact of Cross-Linking-Monomer Characteristics on Pore-Filling-Membrane Performance and Durability in Anion-Exchange Water Electrolysis
2025
·
Jong-Hyeok Park
, Jong-Hyeok Park
, et al.
·
Applied Sciences
·
5
Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
2004
·
E. K. Kim
, J. S. Kim
, et al.
·
Japanese Journal of Applied Physics
·
5
Characteristics of molecular beam epitaxy-grown GaFeAs
2002
·
Y.J Park
, H.T Oh
, et al.
·
Current Applied Physics
·
5
Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property
1997
·
Y.J. Park
, T.H. Yeom
, et al.
·
Solid State Communications
·
5
Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors
2007
·
S.H. Son
, M.G. Kang
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
4
Gate bias controlled NDR in an in-plane-gate quantum dot transistor
2006
·
S.H. Son
, Y.S. Choi
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
4
Estimation of built-in dipole moment in InAs quantum dots
2005
·
Y.M. Park
, Y.M. Park
, et al.
·
Solid State Communications
·
4
Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots
2004
·
J.S. Kim
, E.K. Kim
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
4
Enhanced Curie temperature persisting between 100 and 200K (∼50K by theory) with Mn (∼0.290%) based on InMnP:Zn
2006
·
Yoon Shon
, H.C. Jeon
, et al.
·
Journal of Crystal Growth
·
3
Impact of Cross-Linker Length on the Characteristics of Anion Exchange Membrane Water Electrolyzer
2024
·
Mahamuda Akter
, Yeri Park
, et al.
·
ECS Meeting Abstracts
·
1
Analysis of via-void generation mechanism for giga-bit-scale DRAM
2002
·
D.H. Kim
, J.S. Park
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
1
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Works count:
38
Citation count:
407
H-index:
9
I10-index:
8
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