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Robert M. Kolbas
Observed names:
KOLBAS, ROBERT M.,
R. Kolbas,
R. M. KOLBAS,
R. M. Kolbas,
R.M Kolbas,
R.M. Kolbas,
Robert Kolbas
show all 7
Institution:
North Carolina State University
Observed institutions:
Rutgers, The State University of New Jersey,
North Carolina State University,
University of Illinois Urbana-Champaign,
University of Illinois System,
University of Florida,
Rockwell International (United States),
Honeywell (United States)
show all 7
OpenAlex ID:
A5048870528
Works
174
Awards
4
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
1997
·
J. F. Muth
, J. H. Lee
, et al.
·
Applied Physics Letters
·
785
Quantum-well heterostructure lasers
1980
·
N. Holonyak
, R. Kolbas
, et al.
·
IEEE Journal of Quantum Electronics
·
545
Optical and structural properties of epitaxial MgxZn1−xO alloys
1999
·
A. K. Sharma
, J. Narayan
, et al.
·
Applied Physics Letters
·
391
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
1999
·
J. F. Muth
, R. M. Kolbas
, et al.
·
Journal of Applied Physics
·
361
Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
1999
·
J. F. Muth
, J. D. Brown
, et al.
·
MRS Internet Journal of Nitride Semiconductor Research
·
184
Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
1991
·
M. Asif Khan
, J. N. Kuznia
, et al.
·
Applied Physics Letters
·
177
Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures
1986
·
N. G. Anderson
, W. D. Laidig
, et al.
·
Journal of Applied Physics
·
139
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
1990
·
L.-W. Yin
, Y. Hwang
, et al.
·
IEEE Electron Device Letters
·
130
Visible-blind GaN Schottky barrier detectors grown on Si(111)
1998
·
A. Osinsky
, S. Gangopadhyay
, et al.
·
Applied Physics Letters
·
129
Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
1988
·
R.M. Kolbas
, N.G. Anderson
, et al.
·
IEEE Journal of Quantum Electronics
·
126
Carrier collection in a semiconductor quantum well
1978
·
H. Shichijo
, R.M. Kolbas
, et al.
·
Solid State Communications
·
123
Mantis shrimp–inspired organic photodetector for simultaneous hyperspectral and polarimetric imaging
2021
·
Ali Altaqui
, Pratik Sen
, et al.
·
Science Advances
·
120
PDF
ZnSe light-emitting diodes
1990
·
J. Ren
, K. A. Bowers
, et al.
·
Applied Physics Letters
·
116
Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
1990
·
M. A. Khan
, R. A. Skogman
, et al.
·
Applied Physics Letters
·
114
Man-made quantum wells: A new perspective on the finite square-well problem
1984
·
R. M. Kolbas
, N. Holonyak
·
American Journal of Physics
·
85
Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laser
1979
·
N. Holonyak
, R. M. Kolbas
, et al.
·
Applied Physics Letters
·
80
Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1−xAs-GaAs heterostructures
1980
·
N. Holonyak
, R. M. Kolbas
, et al.
·
Journal of Applied Physics
·
73
Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
1997
·
S. Keller
, B.P. Keller
, et al.
·
Journal of Crystal Growth
·
71
Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers
1978
·
N. Holonyak
, R. M. Kolbas
, et al.
·
Applied Physics Letters
·
68
Planar monolithic integration of a photodiode and a GaAs preamplifier
1983
·
R. M. Kolbas
, J. Abrokwah
, et al.
·
Applied Physics Letters
·
56
Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructures
1978
·
N. Holonyak
, R. M. Kolbas
, et al.
·
Applied Physics Letters
·
56
Light emission from thermally oxidized silicon nanoparticles
1994
·
D. Zhang
, R. M. Kolbas
, et al.
·
Applied Physics Letters
·
47
Photoluminescence from mechanically milled Si and SiO2 spowders
1997
·
T. D. Shen
, I. Shmagin
, et al.
·
Physical review. B, Condensed matter
·
45
High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
1995
·
C. Yuan
, T. Salagaj
, et al.
·
Journal of The Electrochemical Society
·
45
PDF
Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution
2001
·
Minseo Park
, C. W. Teng
, et al.
·
Journal of Applied Physics
·
44
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Works count:
174
Citation count:
5,546
H-index:
35
I10-index:
74
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