Author

Anton J. Bauer

Observed names: A J Bauer, A. Bauer, A. J. Bauer, A.J Bauer, A.J. BAUER, A.J. Bauer, A. J. Bauer, Anton Bauer, Bauer, A.J., Bauer, Anton, Bauer, Anton J.

Observed institutions: Friedrich-Alexander-Universität Erlangen-Nürnberg, Bulgarian Academy of Sciences, Georgi Nadjakov Institute of Solid State Physics, ETH Zurich, Allgemeine Elektrizitäts Gesellschaft (Germany), IBM Research - Thomas J. Watson Research Center, Fraunhofer Institute for Integrated Circuits, Fraunhofer Institute for Integrated Systems and Device Technology, Fraunhofer-Gesellschaft, Freie Universität Berlin

OpenAlex ID: A5048880686

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

2015 · Viktoryia Uhnevionak, Alexander Burenkov, et al. · IEEE Transactions on Electron Devices · 94

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

2008 · Vasil Yanev, Mathias Rommel, et al. · Applied Physics Letters · 86

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Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications

2011 · W. Daves, A. Krauss, et al. · Thin Solid Films · 75

Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio

2004 · A. Paskaleva, A. J. Bauer, et al. · Journal of Applied Physics · 73

Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

2012 · Wenke Weinreich, Ahmed Shariq, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 72

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

2009 · W. Weinreich, R. Reiche, et al. · Microelectronic Engineering · 65

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

2012 · Wenke Weinreich, Lutz Wilde, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 58

Hot electron transport in SiO2 probed with a scanning tunnel microscope

1995 · R. Ludeke, A. Bauer, et al. · Applied Physics Letters · 51

Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology

2010 · Tobias Erlbacher, Anton J. Bauer, et al. · IEEE Electron Device Letters · 50

Investigation of the reliability of 4H–SiC MOS devices for high temperature applications

2011 · Martin Le-Huu, Holger Schmitt, et al. · Microelectronics Reliability · 48

Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

2010 · M. Rommel, G. Spoldi, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 41

A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

2016 · Luigi Di Benedetto, Gian Domenico Licciardo, et al. · IEEE Transactions on Electron Devices · 39

Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping

2015 · Albena Paskaleva, Mathias Rommel, et al. · ACS Applied Materials & Interfaces · 38

Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography

2012 · H. Schmitt, P. Duempelmann, et al. · Microelectronic Engineering · 38

Full wafer microlens replication by UV imprint lithography

2009 · H. Schmitt, M. Rommel, et al. · Microelectronic Engineering · 37

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

2015 · G. Ortiz, C. Strenger, et al. · Applied Physics Letters · 34

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Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes

2016 · Luigi Di Benedetto, Gian Domenico Licciardo, et al. · IEEE Transactions on Electron Devices · 33

Germanium substrate loss during thermal processing

2010 · R.J. Kaiser, S. Koffel, et al. · Microelectronic Engineering · 33

A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier

2019 · L. Di Benedetto, G. D. Licciardo, et al. · IEEE Transactions on Electron Devices · 28

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications

2010 · Martin Le-Huu, Frederik F. Schrey, et al. · Materials science forum · 28

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

2004 · Martin Lemberger, Albena Paskaleva, et al. · Microelectronics Reliability · 28

Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al-induced p+ doping

1995 · H. J. Wen, M. Dähne-Prietsch, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 28

Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K

2019 · Christian D. Matthus, Luigi Di Benedetto, et al. · IEEE Sensors Journal · 27

Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C

2017 · Christian David Matthus, Tobias Erlbacher, et al. · IEEE Transactions on Electron Devices · 27

Honeycomb voids due to ion implantation in germanium

2009 · R.J. Kaiser, S. Koffel, et al. · Thin Solid Films · 27

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Works count: 300

Citation count: 2,620

H-index: 27

I10-index: 81