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Svetlana S. Kormilitsina

Observed names: S. S. Kormilitsina, С.С. Кормилицина
ORCID: 0000-0002-2741-556X
Observed ORCID: 0000-0002-2741-556X
OpenAlex ID: A5049048858
Study of indium antimonide single crystals obtained by the modernized Chokhralsky method in several crystallographic directions
2023 · N. Yu. Komarovsky, E. V. Molodtsova, et al. · Industrial laboratory Diagnostics of materials · 9
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Growing indium antimonide single crystals with a diameter of 100 mm by the modified Chochralsky method
2021 · R. Yu. Kozlov, S. S. Kormilitsina, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 5
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Correct determination of electron concentration in n-GaSb by electrical measurements
2022 · Yuri N. Parkhomenko, Aleksandr G. Belov, et al. · Modern Electronic Materials · 3
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Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
2021 · Roman Yu. Kozlov, Svetlana S. Kormilitsina, et al. · Modern Electronic Materials · 3
Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates
2021 · S. S. Kormilitsina, E. V. Molodtsova, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 2
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Determination of the Criterion for Morphological Classification of Etching Pits Formed in InSb Single Crystals Grown by the Czochralski Method in the [111] Crystallographic Direction and Doped with Tellurium
2024 · N. Yu. Komarovsky, E. O. Zhuravlev, et al. · Inorganic Materials Applied Research · 1
Determination of Conductivity Electron Concentration in Single-Crystalline n-GaSb Samples Using FIR Reflection Spectra at T = 295 K
2024 · A. G. Belov, E. V. Molodtsova, et al. · Optics and Spectroscopy · 1
Investigation of the Strength Properties of Single-Crystal InSb Depending on Crystallographic Orientation and Growth Conditions
2023 · N. Yu. Komarovskii, E. V. Molodtsova, et al. · Journal of Communications Technology and Electronics · 1
Determination of the criterion for the morphological classification of etching pits formed in InSb single crystals grown by the Czochralski method in the crystallographic direction [111] and doped with tellurium
2024 · N. Yu. Komarovsky, E. O. Zhuravlev, et al. · Industrial laboratory Diagnostics of materials
Correct determination of electron concentration in n–GaSb from Hall data
2023 · Yu. N. Parkhomenko, A. G. Belov, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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Определение концентрации электронов проводимости в монокриcталлических образцах n-GaSb по спектрам отражения в дальней инфракрасной области при T=295 K
2023 · А.Г. Белов, Е.В. Молодцова, et al. · Оптика и спектроскопия
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Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers
2020 · Svetlana S. Kormilitsina, Elena V. Molodtsova, et al. · Modern Electronic Materials
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Works count: 12
Citation count: 25
H-index: 3
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