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P. Morfouli

Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
1996 · P. Morfouli, G. Ghibaudo, et al. · IEEE Electron Device Letters · 51
Copper direct bonding: An innovative 3D interconnect
2010 · Pierric Gueguen, Lea Di Cioccio, et al. · 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) · 36
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition
1996 · E.M. Vogel, W.L. Hill, et al. · IEEE Transactions on Electron Devices · 31
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
2020 · Francois Roy, Andrej Suler, et al. · Sensors · 26
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The performance of micro heat pipes measured by integrated sensors
2006 · Martine Le Berre, Guillaume Pandraud, et al. · Journal of Micromechanics and Microengineering · 25
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High temperature silicon carbide MOSFETs with verylow drain leakage current
1994 · T Billon, T. Ouisse, et al. · Electronics Letters · 24
Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation
1991 · C. Papadas, P. Morfouli, et al. · Solid-State Electronics · 20
Low temperature wafer bonding for thin silicon film transfer
2003 · D. Goustouridis, K. Minoglou, et al. · Sensors and Actuators A Physical · 16
Influence of quadratic mobility degradation factoron low frequency noise in MOS transistors
1998 · P. Masson, G. Ghibaudo, et al. · Electronics Letters · 14
Detection of interface and volume traps in very thin oxide MOS structures using DLTS, quasi-static and conductance measurements
1991 · D. Bauza, P. Morfouli, et al. · Solid-State Electronics · 9
Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress
2010 · Bogdan Bercu, Laurent Montès, et al. · Applied Physics Letters · 8
Characterization of mechanical stress on nanostructures for NEMS applications by ultra-thin membrane and self-suspension techniques
2009 · Bogdan Bercu, Xin Xu, et al. · Microelectronic Engineering · 8
Influence of the Fluid on the Experimental Performances of Triangular Silicon Microheat Pipes
2005 · Guillaume Pandraud, Martine Le Berre, et al. · Journal of Electronic Packaging · 8
A Detailed Investigation of the Pseudo-Mos Transistor for in Situ Characterization of Soi Wafers
2005 · T. Ouisse, P. Morfouli, et al. · Proceedings - IEEE International SOI Conference/Proceedings · 8
Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam
2019 · Pierre Janioud, Alexandra Koumela, et al. · Proceedings, IEEE micro electro mechanical systems · 7
Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves G p(Va), using the conductance technique
1992 · C. Papadas, P. Morfouli, et al. · Review of Scientific Instruments · 7
Using a data driven approach for comprehensive Life Cycle Assessment and effective eco design of the Internet of Things: taking LoRa-based IoT systems as examples
2023 · Ernesto Quisbert-Trujillo, Panagiota Morfouli · Discover Internet of Things · 6
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Numerical study of bimetallic actuated micro-membrane with large deformations
2012 · R Lefevre, A Salette, et al. · Journal of Micromechanics and Microengineering · 6
Thermal sensors cointegrated within a MEMS thermally actuated ultrathin membrane
2012 · A Salette, R Lefevre, et al. · Journal of Micromechanics and Microengineering · 5
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FEA Calculations for Ultra Thin Piezoresistive Pressure Sensor on SOI for Heatspreader Integration
2006 · B. Bercu, L. Montes, et al. · 5
Electrical Study of Thin SiO2 Layers Obtained by Anodic Oxidation of p-Type Silicon in Pure Water UsingI–U,C–U, andG–U Measurements
1989 · P. Morfouli, G. Pananakakis · physica status solidi (a) · 5
Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction
2020 · P. Janioud, C. Poulain, et al. · Microelectronics Reliability · 4
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Switching Thermal Piezoresistive Oscillators from Damped to Self-Sustained Regime Using Tunable Resistors
2019 · Pierre Janioud, Alexandra Koumela, et al. · 3
Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition
1999 · P. Masson, P. Morfouli, et al. · Microelectronic Engineering · 3
Tuning the Anti-Phase Mode Sensitivity to Vibrations of a MEMS Gyroscope
2017 · Pierre Janioud, Alexandra Koumela, et al. · 2
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Works count: 78
Citation count: 357
H-index: 9
I10-index: 9
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