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Chomani Gaspe

Observed names: C K Gaspe, C. Gaspe, C. K. Gaspe, C.K. Gaspe, Chomani K. Gaspe, Gaspe, Chomani Kishanika
ORCID: 0009-0008-0108-1996
Observed ORCID: 0009-0008-0108-1996
OpenAlex ID: A5055949129
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer
2008 · InJo Ok, H. Kim, et al. · Applied Physics Letters · 53
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
2008 · N. Goel, D. Heh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack
2009 · J. Huang, N. Goel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38
A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer
2008 · Hyoung-Sub Kim, I. Ok, et al. · Applied Physics Letters · 29
InSb quantum-well structures for electronic device applications
2008 · M. Edirisooriya, T.D. Mishima, et al. · Journal of Crystal Growth · 23
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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer
2009 · Feng Zhu, Han Zhao, et al. · Applied Physics Letters · 17
Band offsets between amorphous LaAlO3 and In0.53Ga0.47As
2007 · N. Goel, W. Tsai, et al. · Applied Physics Letters · 14
Aharonov–Bohm oscillations, quantum decoherence and amplitude modulation in mesoscopic InGaAs/InAlAs rings
2013 · S L Ren, J J Heremans, et al. · Journal of Physics Condensed Matter · 11
High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
2008 · Hyoung-Sub Kim, Injo Ok, et al. · Applied Physics Letters · 10
Effect of strain and confinement on the effective mass of holes in InSb quantum wells
2011 · C. K. Gaspe, M. Edirisooriya, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 8
Observation of surface-state transport in ultrathin Sb
2015 · S. Cairns, N. Teasdale, et al. · Physical Review B · 7
Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors
2009 · Feng Zhu, Han Zhao, et al. · Electrochemical and Solid-State Letters · 6
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Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
2008 · InJo Ok, H. Kim, et al. · Applied Physics Letters · 5
Reducing Rext in laser annealed enhancement-mode In0.53Ga0.47As surface channel n-MOSFET
2010 · I. Ok, D. Veksler, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
Epitaxial growth of elemental Sb quantum wells
2013 · Chomani K. Gaspe, Shayne Cairns, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3
High Electron Mobility (2270 cm2/Vsec) In0.53Ga0.47As Inversion Channel N-MOSFETs with ALD ZrO2 Gate Oxide Providing 1 nm EOT
2008 · S. Koveshnikov, N. Goel, et al. · Conference digest · 3
Cyclotron resonance in P-doped InSb quantum wells
2010 · M.B. Santos, M. Edirisooriya, et al. · Physics Procedia · 2
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Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer
2008 · InJo Ok, H. Kim, et al. · Conference digest · 2
Towards Atomic Scale Tomography Using Correlative 4-D STEM, Strain Mapping, and Atom Probe Tomography
2023 · Edwin Supple, Chomani Gaspe, et al. · Microscopy and Microanalysis · 1
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Voltage-tunable Josephson junctions on germanium quantum wells with in situ aluminum contacts
2026 · J. P. Thompson, J. T. Dong, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Carbon Capping for Specimen Preparation of Atom Probe Samples with Features of Interest Near the Surface
2022 · Edwin Supple, Chomani Gaspe, et al. · Microscopy and Microanalysis
4-D STEM Analyses of Cylindrical Specimens for Atom Probe Tomography
2021 · Brian Gorman, Megan Holtz, et al. · Microscopy and Microanalysis
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SiGe Spintronic Devices with High-k Dielectric Gates
2021 · Jennifer DeMell, Gregory M. Stephen, et al. · Bulletin of the American Physical Society
SiGe Devices with High-k Dielectric Gates
2020 · Jennifer DeMell, Gregory M. Stephen, et al. · Bulletin of the American Physical Society
Remotely-Doped Sb Quantum-Well Structures
2018 · Kaushini Wickramasinghe, Ryan O'Toole, et al. · Bulletin of the American Physical Society
Works count: 44
Citation count: 279
H-index: 9
I10-index: 9
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