Author

Hartmut A. Bracht

Observed names: Bracht Hartmut, Bracht, H., Bracht, Hartmut, Bracht, Hartmut A., H Bracht, H. Bracht, Hartmut Bracht

Observed institutions: University of Stuttgart, Los Alamos National Laboratory, Lawrence Berkeley National Laboratory, Aarhus University, University of Münster, CeNTech, Imperial College London, King Abdullah University of Science and Technology, University of California, Berkeley

ORCID: 0000-0003-3700-6687

Observed ORCID: 0000-0003-3700-6687

OpenAlex ID: A5065071450

Silicon Self-Diffusion in Isotope Heterostructures

1998 · H. Bracht, E. E. Haller, et al. · Physical Review Letters · 313

Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions

1995 · H. Bracht, N. A. Stolwijk, et al. · Physical review. B, Condensed matter · 309

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

2008 · Sergej Brotzmann, Hartmut Bracht · Journal of Applied Physics · 214

Diffusion of n -type dopants in germanium

2014 · A. Chroneos, H. Bracht · Applied Physics Reviews · 188

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Vacancy-mediated dopant diffusion activation enthalpies for germanium

2008 · A. Chroneos, H. Bracht, et al. · Applied Physics Letters · 140

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

2008 · S. Brotzmann, H. Bracht, et al. · Physical Review B · 121

Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon

2007 · H. Bracht, H. H. Silvestri, et al. · Physical Review B · 119

Self-diffusion in germanium isotope multilayers at low temperatures

2008 · E. Hüger, U. Tietze, et al. · Applied Physics Letters · 114

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Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon

2000 · Hartmut Bracht · MRS Bulletin · 111

Large disparity between gallium and antimony self-diffusion in gallium antimonide

2000 · H. Bracht, S. P. Nicols, et al. · Nature · 102

Diffusion and solubility of copper, silver, and gold in germanium

1991 · H. Bracht, N. A. Stolwijk, et al. · Physical review. B, Condensed matter · 97

Diffusion of E centers in germanium predicted using GGA+U approach

2011 · H. Tahini, A. Chroneos, et al. · Applied Physics Letters · 85

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

2008 · A. Chroneos, R. W. Grimes, et al. · Physical Review B · 85

Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys

2010 · R. Kube, H. Bracht, et al. · Journal of Applied Physics · 84

Diffusion of silicon in crystalline germanium

2006 · H H Silvestri, H Bracht, et al. · Semiconductor Science and Technology · 83

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Cation diffusion and ionic conductivity in soda-lime silicate glasses

2005 · F. V. Natrup, H. Bracht, et al. · Physical Chemistry Chemical Physics · 82

Vacancy-arsenic clusters in germanium

2007 · A. Chroneos, R. W. Grimes, et al. · Applied Physics Letters · 80

Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures

2003 · H. Bracht, J. Fage Pedersen, et al. · Physical Review Letters · 79

Intrinsic and extrinsic diffusion of indium in germanium

2009 · R. Kube, H. Bracht, et al. · Journal of Applied Physics · 78

Fluorine effect on As diffusion in Ge

2011 · G. Impellizzeri, S. Boninelli, et al. · Journal of Applied Physics · 77

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Atomic transport in germanium and the mechanism of arsenic diffusion

2006 · Hartmut Bracht, Sergej Brotzmann · Materials Science in Semiconductor Processing · 76

2004 · H. Bracht · Materials Science in Semiconductor Processing · 75

Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations

2007 · H. Bracht · Physical Review B · 74

Fluorine codoping in germanium to suppress donor diffusion and deactivation

2009 · A. Chroneos, R. W. Grimes, et al. · Journal of Applied Physics · 72

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Defect interactions in Sn1−xGex random alloys

2009 · A. Chroneos, C. Jiang, et al. · Applied Physics Letters · 71

Works count: 216

Citation count: 5,398

H-index: 41

I10-index: 108