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S. Vangelista

Observed names: S Vangelista, Silvia Vangelista, Vangelista Silvia, Vangelista, Silvia
ORCID: 0000-0002-9708-4938
Observed ORCID: 0000-0002-9708-4938
OpenAlex ID: A5067542016
Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates
2017 · S. Vangelista, R. Piagge, et al. · Thin Solid Films · 76
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Towards a uniform and large-scale deposition of MoS 2 nanosheets via sulfurization of ultra-thin Mo-based solid films
2016 · Silvia Vangelista, Eugenio Cinquanta, et al. · Nanotechnology · 68
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Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
2016 · Christian Martella, Pierpaolo Melloni, et al. · Advanced Electronic Materials · 47
Formation and dissolution of D-N complexes in dilute nitrides
2007 · Marina Berti, Gabriele Bisognin, et al. · Physical Review B · 45
Low-temperature atomic layer deposition of MgO thin films on Si
2013 · S Vangelista, R Mantovan, et al. · Journal of Physics D Applied Physics · 41
Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions
2011 · S. Vangelista, R. Mantovan, et al. · Thin Solid Films · 26
Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
2011 · R. Mantovan, S. Vangelista, et al. · Thin Solid Films · 20
Chemical vapor deposition of polycrystalline Fe3O4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor
2012 · R. Mantovan, S. Vangelista, et al. · Journal of Applied Physics · 17
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
2008 · G. Bisognin, S. Vangelista, et al. · Materials Science and Engineering B · 17
Fe 3− δ O 4 /MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition
2014 · R Mantovan, S Vangelista, et al. · Journal of Physics D Applied Physics · 16
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Substitutional and clustered B in ion implanted Ge: Strain determination
2010 · G. Bisognin, S. Vangelista, et al. · Journal of Applied Physics · 13
Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition
2018 · Silvia Vangelista, Rossella Piagge, et al. · Beilstein Journal of Nanotechnology · 8
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Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si
2016 · S. Vangelista, A. Lamperti, et al. · Thin Solid Films · 8
全in situ原子層蒸着と化学気相堆積により合成したFe 3-δ O 4 /MgO/Co磁気トンネル接合
2014 · R. Mantovan, S. Vangelista, et al. · Journal of Physics D Applied Physics · 8
Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties
2017 · Silvia Vangelista, Rossella Piagge, et al. · MRS Advances · 6
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Impact of annealing on the current conduction and trap properties of CeO2/La2O3 metal-insulator-metal capacitors
2019 · Isabella Rossetto, Rossella Piagge, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 5
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
2014 · R. Mantovan, S. Vangelista, et al. · Journal of Applied Physics · 5
Growth of 2D-molybdenum disulfide on top of magnetite and iron by chemical methods
2020 · Federico Motti, Christian Martella, et al. · Thin Solid Films · 3
超薄Mo系固体膜の硫化によるMoS 2 ナノシートの均一かつ大規模な堆積に向けて
2016 · Vangelista Silvia, Cinquanta Eugenio, et al. · Nanotechnology · 3
Manipulating Band-to-Band Tunneling Current in Low-Voltage pMOS Devices in BCD Technology: A TCAD and Experimental Investigation
2024 · Guglielmo Albani, Elena Rebussi, et al. · IEEE Transactions on Electron Devices · 2
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN
2010 · T. Cesca, A. Gasparotto, et al. · Applied Physics A · 1
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
2009 · G. Bisognin, S. Vangelista, et al. · Thin Solid Films · 1
Controlled recess etching of ohmic contacts in AlGaN/GaN HEMTs
2026 · Selene Colombo, Bruno Moio, et al. · Materials Science in Semiconductor Processing
Author response for "Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunction: impact of Mg dopant activation"
2026 · Anita Patelli, Gabriele Seguini, et al. · Publons reviews and discussion
Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunctions: the impact of Mg dopant activation
2026 · Anita Patelli, Gabriele Seguini, et al. · Journal of Materials Chemistry C
Works count: 30
Citation count: 436
H-index: 11
I10-index: 11
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