Author

Tsutomu Nishihashi

Observed name: T. Nishihashi

Observed institutions: Fujitsu (Japan), Ulvac (Japan), The University of Osaka

OpenAlex ID: A5068040909

Improvement of electroluminescent characteristics in quantum dot light-emitting diodes using ZnInP/ZnSe/ZnS quantum dots by mixing an electron transport material into the light-emitting layer

2020 · Genichi Motomura, Kei Ogura, et al. · AIP Advances · 22

Magnetization suppression in Co/Pd and CoCrPt by nitrogen ion implantation for bit patterned media fabrication

2010 · Kenji Sato, Antony Ajan, et al. · Journal of Applied Physics · 22

Fabrication, Magnetic, and R/W Properties of Nitrogen-Ion-Implanted Co/Pd and CoCrPt Bit-Patterned Medium

2010 · Antony Ajan, Kenji Sato, et al. · IEEE Transactions on Magnetics · 16

Control of magnetization in spinel-type Fe3O4 thin films by N2 ion implantation

2014 · Eiji Kita, Kazunaga Ono, et al. · Japanese Journal of Applied Physics · 12

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Stencil mask ion implantation technology

2002 · T. Shibata, K. Suguro, et al. · IEEE Transactions on Semiconductor Manufacturing · 12

Ion-graphy implanter with stencil mask

2002 · T. Nishihashi, K. Kashimoto, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 8

Stencil mask ion implantation technology for high performance MOSFETs

2002 · T. Shibata, K. Suguro, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

Lithographyless ion implantation technology for agile fab

2002 · T. Nishihashi, K. Kashimoto, et al. · IEEE Transactions on Semiconductor Manufacturing · 6

Electrostatic accelerators with high energy resolution

1991 · T. Uchiyama, Y. Agawa, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 5

New Charge Control Technology by Stencil Mask Ion Implantation

2001 · Takeshi Shibata, Kyoichi Suguro, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4

The core ion implanter for 300-mm wafers: IW-630

2003 · T. Nishihashi, H. Yokoo, et al. · International Conference on Ion Implantation Technology · 3

First-principles approach to the first step of metal–phosphine bond formation to synthesize alloyed quantum dots using dissimilar metal precursors

2019 · Junki Nagakubo, Tsutomu Nishihashi, et al. · Chemical Physics · 2

4‐3: Solution Synthesis of High‐Quality Indium‐Nitride Quantum Dots

2018 · Junki Nagakubo, Masaaki Hirakawa, et al. · SID Symposium Digest of Technical Papers · 2

Stencil mask Ion Implantation Technology for realistic approach to wafer process

2006 · Kazuhiko Tonari, Tsutomu Nishihashi, et al. · AIP conference proceedings · 2

Development of cryopump for ion implantation equipment

2003 · S. Furuya, M. Terashima, et al. · International Conference on Ion Implantation Technology · 2

Negative ion source for the tandem accelerator

1989 · T. Nishihashi, H. Tsuboi, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2

Freeze-drying of Red Blood Cells Using Ultrafast Cooling by Spraying into a Vacuum

2023 · Tomoka Konoo, Sora Uematsu, et al. · Chemistry Letters · 1

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Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication

2020 · Takumi Okunaga, Tatsuhiro Nozue, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 1

Reproduced Dot Image of Nitrogen Ion Implanted Co/Pd Bit Patterned Media With Flying Head

2010 · Nobuhide Aoyama, Takuya Uzumaki, et al. · IEEE Transactions on Magnetics · 1

Lyophilization of RBCS with trehalose loaded by cell penerating peptide

2024 · Tomoka Konoo, Mizuki Kuniyoshi, et al. · Cryobiology

Green Quantum Dot Light-Emitting Diode with Narrow Emission Spectrum using ZnInP Quantum Dots

2019 · Genichi Motomura, Kei Ogura, et al. · The Japan Society of Applied Physics

Study of Hole Transport Materials for High Efficient Light-Emitting Diodes using Low Toxic Quantum Dots