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David B. Rensch

Observed names: D. B. .. Rensch, D. B. Rensch, D. Rensch, D.B. Rensch, David Rensch
OpenAlex ID: A5069628633
A 120-W X-band spatially combined solid-state amplifier
1999 · Nai-Shuo Cheng, Pengcheng Jia, et al. · IEEE Transactions on Microwave Theory and Techniques · 161
Iterative Diffraction Calculations of Transverse Mode Distributions in Confocal Unstable Laser Resonators
1973 · David B. Rensch, Arthur N. Chester · Applied Optics · 78
Water Vapor Continuum Absorption of Carbon Dioxide Laser Radiation near 10 μ
1969 · John H. McCoy, David B. Rensch, et al. · Applied Optics · 71
40-W CW broad-band spatial power combiner using dense finline arrays
1999 · Nai-Shuo Cheng, A. Alexanian, et al. · IEEE Transactions on Microwave Theory and Techniques · 65
Comparative Studies of Extinction and Backscattering by Aerosols, Fog, and Rain at 106 μ and 063 μ
1970 · D. B. Rensch, R. K. Long · Applied Optics · 62
AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications
1996 · Chanh Nguyen, Takyiu Liu, et al. · IEEE Electron Device Letters · 61
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
1992 · M. Hafizi, J.F. Jensen, et al. · IEEE Electron Device Letters · 61
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
2003 · J.F. Jensen, M. Hafizi, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 56
SiGe HBT technology: device and application issues
2002 · D. Harame, L. Larson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 49
Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
2002 · L. Larson, M. Case, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 46
Ion-beam lithography for IC fabrication with submicrometer features
1979 · D. B. Rensch, R. L. Seliger, et al. · Journal of Vacuum Science and Technology · 44
A 60-watt X-band spatially combined solid-state amplifier
2003 · Nai-Shuo Cheng, Thai-Phuong Dao, et al. · IEEE MTT-S International Microwave Symposium digest · 41
AlInAs/GaInAs HBT IC technology
1991 · J.F. Jensen, W.E. Stanchina, et al. · IEEE Journal of Solid-State Circuits · 40
Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits
1989 · U.K. Mishra, J.F. Jensen, et al. · IEEE Electron Device Letters · 36
Three-Dimensional Unstable Resonator Calculations with Laser Medium
1974 · D. B. Rensch · Applied Optics · 36
High-temperature stable W/GaAs interface and application to metal–semiconductor field-effect transistors and digital circuits
1987 · Jack Y. Josefowicz, David B. Rensch · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 29
The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors
1992 · M. Hafizi, R.A. Metzger, et al. · IEEE Electron Device Letters · 28
Frequency dependence of the surface resistance in high-temperature superconductors
1990 · D.W. Cooke, E.R. Gray, et al. · Solid State Communications · 22
Vertical n p n transistors by maskless boron implantation
1985 · Robert H. Reuss, Damon Morgan, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 21
An X-band monolithic active mixer in SiGe HBT technology
2002 · M. Case, S.A. Maas, et al. · IEEE MTT-S International Microwave Symposium digest · 20
33 GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier
2002 · M. Rodwell, J.F. Jensen, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 18
33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier
1991 · M. Rodwell, J.F. Jensen, et al. · IEEE Journal of Solid-State Circuits · 18
Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs
1990 · W.E. Stanchina, R.A. Metzger, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 17
Performance of the focused-ion-striped transistor (FIST)—A new MESFET structure produced by focused-ion-beam implantation
1987 · D.B. Rensch, D.S. Matthews, et al. · IEEE Transactions on Electron Devices · 17
The use of refractory metal and electron-beam sintering to reduce contact resistance for VLSI
1983 · J.Y.-T. Chen, D.B. Rensch · IEEE Transactions on Electron Devices · 17
Works count: 83
Citation count: 1,382
H-index: 20
I10-index: 36
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