Author

P. Maigné

Observed names: Maigne, P., Maigné, P., P Maigne, P. Maigne, P. MaignÉ

Observed institutions: Centre National de la Recherche Scientifique, University of Ottawa, Laboratoire de physique des Solides, Corning (France), Institute for Microstructural Sciences, Communications Research Centre Canada, National Research Council Canada, Université Pierre-et-Marie-Curie, University of Houston

OpenAlex ID: A5070055554

Growth and characterization of Si1−xGex and Ge epilayers on (100) Si

1988 · J. M. Baribeau, T. E. Jackman, et al. · Journal of Applied Physics · 117

Dislocation structure in InxGa1−xAs/GaAs strained-layer superlattices

1987 · K. Rajan, R. Devine, et al. · Journal of Applied Physics · 48

High saturation power (>16.5 dBm) and low noise figure (<6 dB) semiconductor optical amplifier for C-band operation

2003 · A. Borghesani, N. Fensom, et al. · Optical Fiber Communication Conference · 38

Heteroepitaxy of Ge on (100) Si substrates

1987 · J. M. Baribeau, T. E. Jackman, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 37

X-ray diffraction of relaxed InGaAs heterostructures grown on misoriented (100) GaAs substrates

1992 · P Maigne, A P Roth · Semiconductor Science and Technology · 26

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Adsorption of Sn on cleaved Si(111) surfaces

1985 · A. Taleb-Ibrahimi, C.A. Sebenne, et al. · Surface Science · 16

Structural properties of partially relaxed InxGa1−xAs layers grown on (100) and misoriented GaAs substrates

1993 · P. Maigné, A. P. Roth · Applied Physics Letters · 15

Measurement of residual strain in InGaAs buffer layers

1994 · P. Maigné, J.-M. Baribeau · Journal of Applied Physics · 13

Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering

1998 · P. S. Pizani, T. M. Boschi, et al. · Applied Physics Letters · 11

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Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

1996 · P. Maigné, M. Gendry, et al. · Applied Physics Letters · 10

An InGaAs-InP position-sensing photodetector

1990 · P. Maigne, J.A. Beraldin, et al. · IEEE Journal of Quantum Electronics · 8

Strain relaxation in InAlSb epilayers grown on InSb substrates

1994 · P. Maigné, D. J. Lockwood, et al. · Applied Physics Letters · 7

Investigation of the Ag/InP(110) interface formation

1985 · P. Maigné, C.A. Sébenne, et al. · Surface Science · 7

Structural investigation of MOVPE grown InGaAs buffer layers

1997 · P. Maigné, D. Coulas · Journal of Crystal Growth · 6

Raman scattering from In1−xAlxSb metastable epilayers

1993 · V. P. Gnezdilov, D. J. Lockwood, et al. · Journal of Applied Physics · 6

X-ray diffraction characterization of superlattices grown on offcut (100) substrates

1992 · P. Maigne · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 6

Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates

1992 · P. Maigne, A.P. Roth · Journal of Crystal Growth · 5

Relaxation in tensile-strained InAlSb/InSb heterostructures

1995 · P. Maigné, M. W. C. Dharma-Wardana, et al. · Journal of Applied Physics · 4

Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

1990 · D. Morris, C. Lacelle, et al. · Surface Science · 4

Effect of substrate misorientation on x-ray rocking curves from InGaAs relaxed epitaxial layers

1994 · P. Maigné, J. -M. Baribeau, et al. · Journal of Applied Physics · 3

Experimental analysis of microwave loss due to substrate carrier concentration in traveling-wave electro-optic modulators

1998 · H. R. Khazaei, O. Berolo, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers

1997 · P. Maigné · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2

Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

1992 · A.P. Roth, D. Morris, et al. · Journal of Crystal Growth · 2

Relaxation effect on X-ray rocking curves of InGaAs/GaAs strained layer superlattices

1990 · P. Maigné, A.P. Roth, et al. · Solid State Communications · 2

The growth of gallium arsenide on Si(100) by molecular-beam epitaxy

1987 · W. T. Moore, R. L. S. Devine, et al. · Canadian Journal of Physics · 2

Works count: 35

Citation count: 401

H-index: 10

I10-index: 10