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Andreas Hössinger

Observed names: A Hössinger, A. Hossinger, A. Hössinger, Andreas Hossinger, Hossinger Andreas, Hossinger, Andreas, Hössinger, Andreas
ORCID: 0000-0002-8949-1680
Observed ORCID: 0000-0002-8949-1680
OpenAlex ID: A5072452255
Growth rates of dry thermal oxidation of 4H-silicon carbide
2016 · V. Šimonka, A. Hössinger, et al. · Journal of Applied Physics · 46
ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation
2017 · Vito Šimonka, Andreas Hössinger, et al. · The Journal of Physical Chemistry A · 40
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
2020 · Alexander Toifl, Michael Quell, et al. · IEEE Access · 26
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Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide
2018 · V. Šimonka, A. Toifl, et al. · Journal of Applied Physics · 20
Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces
2017 · Paul Manstetten, Josef Weinbub, et al. · Procedia Computer Science · 18
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Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide
2018 · Vito Simonka, Andreas Hossinger, et al. · IEEE Transactions on Electron Devices · 15
Shared-memory block-based fast marching method for hierarchical meshes
2021 · Michael Quell, Georgios Diamantopoulos, et al. · Journal of Computational and Applied Mathematics · 13
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A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation
2006 · Vasily Suvorov, Andreas Hössinger, et al. · Journal of Computational Electronics · 13
Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures
2022 · Luiz Felipe Aguinsky, Frâncio Rodrigues, et al. · Solid-State Electronics · 11
Continuum level-set model for anisotropic wet etching of patterned sapphire substrates
2021 · A Toifl, F Rodrigues, et al. · Semiconductor Science and Technology · 11
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Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes
2006 · W. Wessner, J. Cervenka, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 11
Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide
2017 · Vito Simonka, Andreas Hossinger, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 10
Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach
2016 · Josef Weinbub, Andreas Hössinger · High Performance Computing Symposium · 10
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
2016 · Vito Šimonka, Georg Nawratil, et al. · Solid-State Electronics · 9
Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-ordered Fast Iterative Method
2016 · Josef Weinbub, Andreas Hössinger · Procedia Computer Science · 9
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Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation
1999 · Andreas Hössinger, S. Selberherr · 9
Modeling the impact of incomplete conformality during atomic layer processing
2023 · Tobias Reiter, Luiz Felipe Aguinsky, et al. · Solid-State Electronics · 8
Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity
2016 · Paul Manstetten, Lado Filipovic, et al. · Solid-State Electronics · 8
Rigorous integration of semiconductor process and device simulators
2003 · T. Binder, A. Hossinger, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 8
Parallelization of a Monte Carlo ion implantation simulator
2000 · A. Hossinger, E. Langer, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 8
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications
2019 · Michael Quell, Alexander Toifl, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 7
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics
2019 · Alexander Toifl, Vito Simonka, et al. · IEEE Transactions on Electron Devices · 7
A shared memory parallel multi-mesh fast marching method for re-distancing
2019 · Georgios Diamantopoulos, Andreas Hössinger, et al. · Advances in Computational Mathematics · 7
Accelerated redistancing for level set-based process simulations with the fast iterative method
2014 · Josef Weinbub, Andreas Hössinger · Journal of Computational Electronics · 7
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching
2021 · Frâncio Rodrigues, Luiz Felipe Aguinsky, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
Works count: 86
Citation count: 455
H-index: 11
I10-index: 13
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