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D. C. Kim

Observed names: D. C. KIM, D.C. Kim, D.‐C. Kim, Dang-Won Kim, Dong‐Byum Kim
OpenAlex ID: A5073716502
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
2007 · M.‐J. Lee, Y. Park, et al. · Advanced Materials · 435
A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
2006 · M.‐J. Lee, S. Seo, et al. · Advanced Materials · 234
Improvement of resistive memory switching in NiO using IrO2
2006 · D. C. Kim, M. J. Lee, et al. · Applied Physics Letters · 190
Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
2008 · S.‐E. Ahn, M.‐J. Lee, et al. · Advanced Materials · 169
Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes
2009 · J. S. Choi, J.-S. Kim, et al. · Applied Physics Letters · 115
Electrode dependence of resistance switching in polycrystalline NiO films
2005 · S. Seo, M. J. Lee, et al. · Applied Physics Letters · 101
Resistive memory switching in epitaxially grown NiO
2007 · S. R. Lee, K. Char, et al. · Applied Physics Letters · 59
Bright Light Emission of a Single Polythiophene Nanotube Strand with a Nanometer‐scale Metal Coating
2007 · J. Joo, D. H. Park, et al. · Advanced Materials · 59
Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching
2011 · S.R. Lee, H.M. Kim, et al. · Current Applied Physics · 10
The diffusion of silicon atoms in stack structures of La2O3 and Al2O3
2012 · W.J. Lee, J.W. Ma, et al. · Current Applied Physics · 8
Superior Cu fill with highly reliable Cu/ULK integration for 10nm node and beyond
2013 · T. Matsuda, J. J. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
P‐3: Development of CMOS Six Mask and PMOS Five Mask Poly‐Si Architecture with RGB+White Color
2004 · Chung Yi, Pil‐Mo Choi, et al. · SID Symposium Digest of Technical Papers · 5
Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics
2007 · K.J. Nam, S.H. Lee, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Highly manufacturable sub-100 nm DRAM integrated with full functionality
2003 · S. Choi, B.Y. Nam, et al. · Symposium on VLSI Technology · 3
Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE)
2006 · G.H. Buh, T. Park, et al. · 2
Mass production of magnetron for microwave oven
2003 · Kyu-Suk Chang, Duk-Kun Suh, et al. · IEEE International Vacuum Electronics Conference (IVEC) · 2
Investigation on Resistive Memory Switching Mechanism of NiO
2007 · D. C. KIM, S. SEO, et al. · Integrated ferroelectrics
Electrode dependence of resistance switching in NiO thin films
2007 · Dong‐Wook Kim, Dongwook Shin, et al. · Journal of the Korean Physical Society
Works count: 18
Citation count: 1,402
H-index: 9
I10-index: 9
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