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Thomas Rödle

Observed names: Rödle, T., T Rödle, T. C. Rödle, T. Rodle, T. Rödle, T. Rödle, T.C. Rodle
OpenAlex ID: A5073718207
Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
2006 · V. Desmaris, M. Rudzinski, et al. · IEEE Transactions on Electron Devices · 85
A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation
2007 · F. Allerstam, H. Ö. Ólafsson, et al. · Journal of Applied Physics · 79
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
2005 · G. Gudjonsson, H.O. Olafsson, et al. · IEEE Electron Device Letters · 57
Ion-beam-induced amorphization of 6H-SiC
1995 · Wolfgang Bolse, Jens Conrad, et al. · Surface and Coatings Technology · 47
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2009 · M. Dammann, W. Pletschen, et al. · Microelectronics Reliability · 33
Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
1996 · J. Conrad, T. Rödle, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 32
High field effect mobility in Si face 4H-SiC MOSFET transistors
2004 · H.Ö. Ólafsson, G. Gudjónsson, et al. · Electronics Letters · 31
Long and Short Range Order in Ion Irradiated Ceramics Studied by IBA, EXAFS and Raman
1997 · W. Bolse, J. Conrad, et al. · Materials science forum · 31
Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD
2006 · M. Rudziński, V. Desmaris, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 30
GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2009 · P. Waltereit, W. Bronner, et al. · physica status solidi (a) · 29
Reliability status of GaN transistors and MMICs in Europe
2010 · M. Dammann, M. Casar, et al. · IEEE International Reliability Physics Symposium proceedings · 22
Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
2007 · F Allerstam, G Gudjónsson, et al. · Semiconductor Science and Technology · 22
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High Channel Mobility 4H-SiC MOSFETs
2006 · E.Ö. Sveinbjörnsson, G. Gudjónsson, et al. · Materials science forum · 22
Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates
2007 · M. Rudziński, E. Jezierska, et al. · physica status solidi (a) · 21
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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
2010 · Martina Baeumler, Frank Gütle, et al. · Journal of Electronic Materials · 20
Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps
2007 · E.Ö. Sveinbjörnsson, Fredrik Allerstam, et al. · Materials science forum · 19
Predictive Simulation of AlGaN/GaN HEMTs
2007 · S. Vitanov, V. Palankovski, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 16
Influence of the misorientation of 4H‐SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers
2005 · M. Rudziński, P. R. Hageman, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 14
Efficient AlGaN/GaN HEMT Power Amplifiers
2008 · R. Quay, F. van Raay, et al. · European Microwave Integrated Circuits Conference · 13
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
2005 · H.Ö. Ólafsson, G. Gudjónsson, et al. · Electronics Letters · 12
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
2005 · E.Ö. Sveinbjörnsson, H.Ö. Ólafsson, et al. · Materials science forum · 9
A surface-potential based model for GaN HEMTs in RF power amplifier applications
2010 · D.L. John, F. Allerstam, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
2010 · Jutta Kühn, Markus Musser, et al. · International Journal of Microwave and Wireless Technologies · 7
Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
2009 · M. Dammann, Markus Cäsar, et al. · 7
Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
2010 · P. Waltereit, W. Bronner, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
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Works count: 46
Citation count: 716
H-index: 16
I10-index: 20
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