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Soshun Doko

Observed name: Doko, Soshun
ORCID: 0009-0009-8560-4412
Observed ORCID: 0009-0009-8560-4412
OpenAlex ID: A5073725962
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · Applied Physics Letters · 12
Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio
2024 · Shinnosuke Yasuoka, Takao Shimizu, et al. · Advanced Materials Interfaces · 10
Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors
2025 · Nana Sun, Kazuki Okamoto, et al. · APL Materials · 5
Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm
2025 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials · 2
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Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM
2024 · Soshun Doko, Naoko Matsui, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 1
Bottom Electrode Crystallinity-Driven Enhancement of Switching Behavior in Scaled (Al0.9Sc0.1)N Films
2026 · Nana Sun, Soshun Doko, et al. · ACS Applied Electronic Materials
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40 nm-thick Pt/(Al0.9Sc0.1)N/Pt ferroelectric capacitor stacks for logic-embedded memory on 300 mm Si with wafer-scale uniformity and process stability
2026 · Soshun Doko, Naoko Matsui, et al. · Microelectronic Engineering
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Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)
2026 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials
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FeRAM向け (Al,Sc)N膜における強誘電特性の膜厚依存性評価
2025 · 道古宗俊, Soshun Doko, et al. · Tokyo Tech Research Repository (Tokyo Institute of Technology)
Stable ferroelectric property at high temperature under nydrogen gas in (Al, Sc)N thin films
2025 · Nana Sun, 岡本 一輝, et al. · Institutional Repositories DataBase (IRDB)
薄膜化した (Al1-xScx)N膜における結晶性・強誘電特性のSc組成比依存性
2025 · 道古, 宗俊, Doko, Soshun, et al. · Institutional Repositories DataBase (IRDB)
Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM
2024 · 道古, 宗俊, Doko, Soshun, et al. · Institutional Repositories DataBase (IRDB)
Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single- and Tri-Layered Structures With Different Sc/(Al+Sc) Ratio
2024 · 安岡, 慎之介, Yasuoka, Shinnosuke, et al. · Institutional Repositories DataBase (IRDB)
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · International Conference on Solid State Devices and Materials (SSDM)
FeRAM向け (Al,Sc)N膜における強誘電特性の膜厚依存性評価
2024 · 道古, 宗俊, Doko, Soshun, et al. · Institutional Repositories DataBase (IRDB)
Pt下部電極の膜厚がAlScNの膜特性に及ぼす影響
2024 · 道古, 宗俊, Doko, Soshun, et al. · Institutional Repositories DataBase (IRDB)
Influence of the material selection for an electrode on forming voltage of the HfO x -based ReRAM
2021 · Masahiro Suzuki, Soshun Doko, et al. · The Japan Society of Applied Physics
Defect Evaluation of O2-annealed TaOx for Transparent ReRAM with High Resistance Ratio $(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}>10^{9}$
2019 · Soshun Doko, Yoriko Suda, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Evaluation of electrical resistance for O 2 -annealed TaO x ReRAM
2019 · Soshun Doko, Yoshiaki Ishii, et al. · The Japan Society of Applied Physics
Works count: 32
Citation count: 30
H-index: 3
I10-index: 2
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