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Arthur H. Edwards

Observed names: A H Edwards, A. Edwards, A. H. Edwards, A.H Edwards, A.H. EDWARDS, A.H. Edwards, Arthur Edwards, Arthur H Edwards, Edwards, Arthur H.
Observed institutions: University of North Carolina at Charlotte, William Paterson University, United States Air Force Research Laboratory, United States Department of the Army, Lehigh University, University of Utah, Kirtland Air Force Base, United States Army, Sandia National Laboratories, U.S. Air Force Research Laboratory Space Vehicles Directorate
ORCID: 0000-0001-7326-1779
Observed ORCID: 0000-0001-7326-1779
OpenAlex ID: A5073729961
Electronic structure of intrinsic defects in crystalline germanium telluride
2006 · Arthur Edwards, Andrew Pineda, et al. · Physical Review B · 239
Theory of the peroxy-radical defect in a -Si O2
1982 · Arthur H. Edwards, W. Beall Fowler · Physical review. B, Condensed matter · 226
Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors
1993 · R. E. Stahlbush, A. H. Edwards, et al. · Journal of Applied Physics · 182
Asymmetry and long-range character of lattice deformation by neutral oxygen vacancy in α-quartz
2002 · Vladimir B. Sulimov, Peter V. Sushko, et al. · Physical review. B, Condensed matter · 137
Mechanisms for radiation dose-rate sensitivity of bipolar transistors
2003 · H.P. Hjalmarson, R.L. Pease, et al. · IEEE Transactions on Nuclear Science · 125
Theory of the Pb center at the <111> Si/ SiO2 interface
1987 · Arthur H. Edwards · Physical review. B, Condensed matter · 111
Interaction of H and H2 with the silicon dangling orbital at the 〈111〉 Si/ SiO2 interface
1991 · Arthur H. Edwards · Physical review. B, Condensed matter · 91
Reconfigurable Memristive Device Technologies
2015 · Arthur H. Edwards, Hugh J. Barnaby, et al. · Proceedings of the IEEE · 82
Theory of persistent, p-type, metallic conduction in c-GeTe
2005 · Arthur H Edwards, Andrew C Pineda, et al. · Journal of Physics Condensed Matter · 70
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An Introduction to Reconfigurable Systems
2015 · James C. Lyke, Christos G. Christodoulou, et al. · Proceedings of the IEEE · 65
Semiempirical molecular orbital techniques applied to silicon dioxide: MINDO/3
1985 · Arthur H. Edwards, W.Beall Fowler · Journal of Physics and Chemistry of Solids · 65
Layer intermixing during metal/metal oxide adsorption: Ti/sapphire(0001)
2002 · C. Verdozzi, P.A. Schultz, et al. · Physical review. B, Condensed matter · 60
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Calibration of embedded-cluster method for defect studies in amorphous silica
2004 · Andrey S. Mysovsky, Peter V. Sushko, et al. · Physical Review B · 52
Interaction of hydrogen with defects in a-SiO2
1994 · Arthur H. Edwards, John A. Pickard, et al. · Journal of Non-Crystalline Solids · 49
Dissociation of H2 at silicon dangling orbitals in a-SiO2: a quantum mechanical treatment of nuclear motion
1995 · Arthur H. Edwards · Journal of Non-Crystalline Solids · 46
Theory of the self-trapped hole ina- SiO2
1993 · Arthur H. Edwards · Physical Review Letters · 38
Depassivation of Damp‐Oxide P b Centers by Thermal and Electric Field Stress
1991 · G. J. Gerardi, E. H. Poindexter, et al. · Journal of The Electrochemical Society · 33
Thermally activated electron capture by mobile protons in SiO2 thin films
1998 · K. Vanheusden, S. P. Karna, et al. · Applied Physics Letters · 32
Interaction of hydrogenated molecules with intrinsic defects in a-SiO2
1988 · Arthur H. Edwards, Geoffrey Germann · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 31
Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC
2021 · Peter A. Schultz, Renee M. Van Ginhoven, et al. · Physical review. B./Physical review. B · 29
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A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells
2015 · W. Chen, H. J. Barnaby, et al. · IEEE Transactions on Nuclear Science · 27
Molecular orbital calculations on methyl alkyls and hydrides used in the organometallic vapor phase epitaxy of some III–V semiconductor films. I
1991 · Arthur H. Edwards, K. A. Jones · The Journal of Chemical Physics · 24
Asymmetrical relaxation of simple E’ centers in silicon dioxide isomorphs
1988 · Arthur H. Edwards, W. Beall Fowler, et al. · Physical review. B, Condensed matter · 24
Static impedance behavior of programmable metallization cells
2015 · S. Rajabi, M. Saremi, et al. · Solid-State Electronics · 23
Transient Thermal Gradients in Barium Titanate Positive Temperature Coefficient (PTC) Thermistors
1998 · David S. Smith, Noureddine Ghayoub, et al. · Journal of the American Ceramic Society · 23
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Works count: 95
Citation count: 2,202
H-index: 23
I10-index: 39
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