Author

Dohaing Lee

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Observed institutions: Samsung (South Korea), Samsung Electronics (South Korea), Sungkyunkwan University

OpenAlex ID: A5073748946

Damage during SiO2 Etching by Low-Angle Forward Reflected Neutral Beam

2002 · Dohaing Lee, Minjae Chung, et al. · Japanese Journal of Applied Physics · 9

Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method

2004 · Dohaing Lee, ByungJae Park, et al. · Japanese Journal of Applied Physics · 7

Damage during SiO_2 Etching by Low-Angle Forward Reflected Neutral Beam : Instrumentation, Measurement, and Fabrication Technology

2002 · Dohaing Lee, Minjae Chung, et al. · Japanese Journal of Applied Physics · 1

Simulation-guided AI-driven digital twin for plasma etching in semiconductor fabrication

2026 · Sanghoon Myung, Kyeyeop Kim, et al. · Device

Physics-based AI models for optimization of a multistep, multistate RF pulsed contact hole etch process

2025 · Bruce Edelman, Jaekwang Song, et al.

Visualization of Door-Slim Sound by using Beamforming

2016 · Jungoo Kang, Dohaing Lee, et al. · 한국소음진동공학회 학술대회논문집

Works count: 6

Citation count: 17

H-index: 2

I10-index: