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Phil Rutter

Observed name: P. Rutter
OpenAlex ID: A5073794245
The Trench Power MOSFET: Part I—History, Technology, and Prospects
2017 · Richard K. Williams, Mohamed N. Darwish, et al. · IEEE Transactions on Electron Devices · 301
The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
2017 · Richard K. Williams, Mohamed N. Darwish, et al. · IEEE Transactions on Electron Devices · 155
Understanding Linear-Mode Robustness in Low-Voltage Trench Power MOSFETs
2009 · O.M. Alatise, I. Kennedy, et al. · IEEE Transactions on Device and Materials Reliability · 27
Lateral smart-discrete process and devices based on thin-layer silicon-on-insulator
2002 · T. Letavic, J. Petruzzello, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 27
Low voltage superjunction power MOSFET: An application optimized technology
2011 · Phil Rutter, Steven T Peake · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 17
Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain
2016 · Mo-Huai Chang, Phil Rutter · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13
High current repetitive avalanche of low voltage trench power MOSFETs
2009 · P. Rutter, K. Heppenstall, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 12
A Fully Realized `Field Balanced' TrenchMOS Technology
2008 · Steven T. Peake, Phil Rutter, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11
Repetitive avalanche cycling of low-voltage power trench n-MOSFETs
2010 · Olayiwola Alatise, Ian Kennedy, et al. · European Solid-State Device Research Conference · 7
Considerations in the design of a low‐voltage power MOSFET technology
2019 · Phil Rutter · IET Power Electronics · 5
A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating
2015 · E. Efthymiou, P. Rutter, et al. · Microelectronics Reliability · 5
Low voltage MOSFET optimized for low VDS transient voltages
2013 · P. Rutter, S. Peake, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
A magnetostatic 2 1/2- dimensional field calculation program for turbogenerators
1983 · D. Renew, S. Blake, et al. · IEEE Transactions on Magnetics · 3
A development environment for field diagnosis tools
2003 · K.P. Lee, J. Martin, et al. · IEEE Conference on Artificial Intelligence Applications (CAIA) · 2
Super Q – A Revolution in Superjunction Technology
2026 · Phil Rutter, Haian Lin, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
The Impact of Trench Depth on the Reliability of Repetitively Avalanched Low-Voltage Discrete Power Trench nMOSFETs
2010 · Olayiwola Alatise, Ian Kennedy, et al. · IEEE Electron Device Letters
Works count: 16
Citation count: 588
H-index: 8
I10-index: 8
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