Author

A. Rebey

Observed names: A Rebey, A. REBEY, Ahmed Alhadi Rebey, Ahmed Rebey, Ahmed. Rebey, Rebey, A., Rebey, Ahmed

Institutions: Qassim University, University of Monastir

Observed institutions: Qassim University, University of Monastir

ORCID: 0000-0002-7541-9573

Observed ORCID: 0000-0002-7541-9573

OpenAlex ID: A5076537517

In situ optical monitoring of the decomposition of GaN thin films

1999 · A Rebey, T Boufaden, et al. · Journal of Crystal Growth · 91

Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

2008 · I. Moussa, H. Fitouri, et al. · Thin Solid Films · 64

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

2010 · Z Chine, H Fitouri, et al. · Semiconductor Science and Technology · 53

AP-MOVPE of thin GaAs1−xBix alloys

2006 · H. Fitouri, I. Moussa, et al. · Journal of Crystal Growth · 46

Electronic band structure calculation of GaNAsBi alloys and effective mass study

2013 · M.M. Habchi, A. Ben Nasr, et al. · Infrared Physics & Technology · 45

Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy

2008 · I Moussa, H Fitouri, et al. · Semiconductor Science and Technology · 43

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First-principles calculation of the physical properties of GaAs1-xBixalloys

2011 · M Mbarki, A Rebey · Semiconductor Science and Technology · 40

Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys

2015 · H. Fitouri, Y. Essouda, et al. · Optical Materials · 37

Surface analysis of different oriented GaAs substrates annealed under bismuth flow

2006 · H. Fitouri, I. Moussa, et al. · Journal of Crystal Growth · 36

Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model

2014 · M.M. Habchi, A. Ben Nasr, et al. · Infrared Physics & Technology · 34

Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

2010 · H. Fitouri, I. Moussa, et al. · Microelectronic Engineering · 31

Stress and density of defects in Si‐doped GaN

2006 · Z. Chine, A. Rebey, et al. · physica status solidi (a) · 31

Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys

2012 · M. Mbarki, R. Alaya, et al. · Solid State Communications · 30

Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy

2011 · Z. Chine, H. Fitouri, et al. · Journal of Crystal Growth · 27

In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE

2003 · A Rebey, M.M Habchi, et al. · Journal of Crystal Growth · 25

First principles calculations of structural and electronic properties of GaN 1−x Bi x alloys

2012 · M. Mbarki, A. Rebey · Journal of Alloys and Compounds · 24

Diffusion of vanadium in GaAs

2004 · A. Bchetnia, M. Souissi, et al. · Journal of Crystal Growth · 19

Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy

2015 · Y. Essouda, H. Fitouri, et al. · Materials Letters · 18

Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs

1998 · A. Rebey, L. Béji, et al. · Journal of Crystal Growth · 17

Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy

2009 · Nebiha Ben Sedrine, Imed Moussa, et al. · Applied Physics Letters · 16

Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages

2017 · M. Bouzidi, S. Soltani, et al. · Optical Materials · 15

Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy

2013 · R. Boussaha, H. Fitouri, et al. · Applied Surface Science · 15

Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor

1998 · A Rebey, A Bchetnia, et al. · Journal of Crystal Growth · 15

Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates

2013 · I. Zaied, H. Fitouri, et al. · Journal of Physics and Chemistry of Solids · 14

Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study

2023 · R. Alaya, K. Kourchid, et al. · Russian Journal of Physical Chemistry B · 13

Works count: 139

Citation count: 1,417

H-index: 18

I10-index: 53