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S. Ikegawa
Observed names:
Ikegawa, Sumio,
S Ikegawa,
Sumio IKEGAWA,
Sumio Ikegawa
Institution:
Everspin Technologies (United States)
Observed institutions:
NEC (Japan),
Toshiba (Japan),
Everspin Technologies (United States),
International Superconductivity Technology Center,
The University of Tokyo
ORCID:
0000-0002-3690-8964
Observed ORCID:
0000-0002-3690-8964
OpenAlex ID:
A5079110618
Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
2008
·
Masahiko Nakayama
, Tadashi Kai
, et al.
·
Journal of Applied Physics
·
308
Magnetoresistive Random Access Memory: Present and Future
2020
·
Sumio Ikegawa
, Frederick B. Mancoff
, et al.
·
IEEE Transactions on Electron Devices
·
271
Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
2008
·
T. Kishi
, H. Yoda
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
225
A 64Mb MRAM with clamped-reference and adequate-reference schemes
2010
·
Kenji Tsuchida
, Tsuneo Inaba
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
205
High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs
2009
·
Hiroaki Yoda
, Tatsuya Kishi
, et al.
·
Current Applied Physics
·
179
The growing memristor industry
2025
·
Mario Lanza
, Sebastian Pazos
, et al.
·
Nature
·
177
Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications
2019
·
S. Aggarwal
, H. Almasi
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
83
Electrical Properties of Single Crystalline CeO2High-k Gate Dielectrics Directly Grown on Si (111)
2002
·
Yukie Nishikawa
, Noburu Fukushima
, et al.
·
Japanese Journal of Applied Physics
·
83
PDF
Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory
2009
·
Kuniaki Sugiura
, Shigeki Takahashi
, et al.
·
Japanese Journal of Applied Physics
·
59
PDF
CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications
2017
·
D. Shum
, D. Houssameddine
, et al.
·
Symposium on VLSI Technology
·
49
High-Speed Spin-Transfer Switching in GMR Nano-Pillars With Perpendicular Anisotropy
2011
·
H. Tomita
, T. Nozaki
, et al.
·
IEEE Transactions on Magnetics
·
37
Technology for reliable spin-torque MRAM products
2016
·
J. M. Slaughter
, K. Nagel
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
36
Unified understanding of both thermally assisted and precessional spin-transfer switching in perpendicularly magnetized giant magnetoresistive nanopillars
2013
·
H. Tomita
, S. Miwa
, et al.
·
Applied Physics Letters
·
34
Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory
2010
·
Keiji Hosotani
, Makoto Nagamine
, et al.
·
Japanese Journal of Applied Physics
·
33
Effects of Zn substitution for Cu on superconducting and normal-state properties of (La,Sr )2 CuO4 , (Nd,Ce,Sr )2 CuO4 , and (Nd,Ce )2 CuO4
1991
·
S. Ikegawa
, T. Yamashita
, et al.
·
Physical review. B, Condensed matter
·
29
Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM
2006
·
S. Takahashi
, T. Kai
, et al.
·
IEEE Transactions on Magnetics
·
28
High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications
2022
·
S. Ikegawa
, K. Nagel
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
26
Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs
2005
·
M. Yoshikawa
, T. Kai
, et al.
·
Journal of Applied Physics
·
22
Commercialization of MRAM – Historical and Future Perspective
2021
·
Sumio Ikegawa
, Frederick B. Mancoff
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
19
Improvement of robustness against write disturbance by novel cell design for high density MRAM
2004
·
T. Kai
, M. Yoshikawa
, et al.
·
19
Thermoelectric power of the (Eu,Ce )4 (Ba,Eu )4 Cu6 Oy phase and the T* phase: Comparison between superconducting and nonsuperconducting compounds
1991
·
S. Ikegawa
, T. Wada
, et al.
·
Physical review. B, Condensed matter
·
19
Commercialization of 1Gb Standalone Spin-Transfer Torque MRAM
2021
·
J. J. Sun
, M. DeHerrera
, et al.
·
IEEE International Memory Workshop (IMW)
·
18
Hierarchical Nonvolatile Memory with Perpendicular Magnetic Tunnel Junctions for Normally-Off Computing
2010
·
K. Abe
, K. Nomura
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
18
A 16Mb MRAM with FORK Wiring Scheme and Burst Modes
2006
·
Y. Iwata
, K. Tsuchida
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
18
Reduction of switching current distribution in spin transfer magnetic random access memories
2008
·
M. Iwayama
, T. Kai
, et al.
·
Journal of Applied Physics
·
17
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Works count:
113
Citation count:
2,357
H-index:
19
I10-index:
39
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