Author

Yoshiro Kabe

Observed name: Y. Kabe

Institution: Skyworks Solutions (Japan)

Observed institutions: Tokyo Electron (Japan), University of Tsukuba, Skyworks Solutions (Japan)

OpenAlex ID: A5082084658

Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature

2013 · T. Tanimura, Y. Watanabe, et al. · Journal of Applied Physics · 19

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

2019 · A. Nagakubo, S. Tsuboi, et al. · Applied Physics Letters · 11

Oxidation of Silicon Utilizing a Microwave Plasma System: Electric-Stress Hardening of SiO2 Films by Controlling the Surface and Interface Roughness

2012 · Yoshiro Kabe, Ryu Hasunuma, et al. · Japanese Journal of Applied Physics · 9

Frequency response study of surface acoustic wave devices with SiO x N y film using LiTaO 3 substrate

2018 · Atsushi Nishimura, Satoru Matsuda, et al. · Japanese Journal of Applied Physics · 8

The Temperature Coefficients of Frequency of Surface Acoustic Wave Devices With SiO x N y Passivation Films on LiTaO3 Substrates

2020 · Atsushi Nishimura, Satoru Matsuda, et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 4

Evaluation of Properties of SiO2 Films Fabricated by Plasma Oxidation

2011 · Takuya Yamaguchi, Kohki Nagata, et al. · ECS Transactions · 3

Long TDDB Lifetime of SiO2 Film by Controlling Degradation Rate and SiO2/Si Micro-roughness

2009 · Yoshiro Kabe, Junichi Kitagawa, et al. · ECS Transactions · 3

Study for Temperature Coefficient of Frequency of Surface Acoustic Wave Devices with SiOxNy Film Using LiTa03 Substrate

2018 · A. Nishimura, S. Matsuda, et al. · IEEE International Ultrasonics Symposium · 1

Notice of Removal: Temperature behavior of sound velocity of SiON thin films studied by picosecond ultrasound

2017 · Seiya Tsuboi, Hirotsugu Ogi, et al. · IEEE International Ultrasonics Symposium · 1

Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals

2014 · Yoshiro Kabe, Ryu Hasunuma, et al. · Japanese Journal of Applied Physics · 1

Correlation Between the Resonator Properties and Fourier Transform Infrared Spectra of Silicon Oxynitride Films for Surface Acoustic Wave Devices

2019 · Satoru Matsuda, Atsushi Nishimura, et al. · IEEE International Ultrasonics Symposium

Evaluation of SiO2 Film Properties Fabricated by Plasma Oxidation

2011 · Takuya Yamaguchi, Kohki Nagata, et al. · ECS Meeting Abstracts

Highly Reliable Silicon Dioxide Formation Technique with Plasma and Thermal oxidation

2009 · Y. Kabe, J. Kitagawa, et al. · International Conference on Solid State Devices and Materials (SSDM)

Long TDDB Lifetime of SiO2 Film by Controlling Degradation Rate and SiO2/Si Microroughness

2009 · Yoshiro Kabe, Junichi Kitagawa, et al. · ECS Meeting Abstracts

Generation and Characterization of Multiple Bonded Silicon-Containing Ions Using Mass

2001 · T. Takeuchi, Atsuo Tamura, et al. · UvA-DARE (University of Amsterdam)

Works count: 15

Citation count: 60

H-index: 4

I10-index: 2