Author

Sylvie Mignot

Observed names: S. M. Mignot, S. Mignot

Observed institutions: IBM (United States), GlobalFoundries (United States), STMicroelectronics (France), STMicroelectronics (United States)

OpenAlex ID: A5084367015

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

2010 · Q. Liu, A. Yagishita, et al. · Symposium on VLSI Technology · 91

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

2015 · Isaac Lauer, N. Loubet, et al. · Symposium on VLSI Technology · 60

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

2014 · Chi-Chun Liu, Cristina Estrada-Raygoza, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 23

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

2013 · A. Khakifirooz, R. Sreenivasan, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 7

Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond

2024 · R. Bao, Y. Oniki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5

56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via

2012 · James Hsueh-Chung Chen, Christopher Waskiewicz, et al. · IEEE International Interconnect Technology Conference (IITC) · 4

Works count: 6

Citation count: 190

H-index: 5

I10-index: 3