Author

Tomoka Nishikawa

Institution: Novel Crystal Technology, Inc. (Japan)

Observed institutions: Novel Crystal Technology, Inc. (Japan), The University of Osaka

ORCID: 0009-0009-0441-3316

Observed ORCID: 0009-0009-0441-3316

OpenAlex ID: A5084858286

Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks

2023 · Tomoka Nishikawa, Ken Goto, et al. · Japanese Journal of Applied Physics · 23

Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters · 2

Investigation of origin of polycrystalline defect in homoepitaxial (01¯1¯) β -Ga2O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy

2026 · Sayleap Sdoeung, Kohei Sasaki, et al. · Applied Physics Letters

Works count: 3

Citation count: 25

H-index: 2

I10-index: 1