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Pavel B. Rodin

Observed names: P B Rodin, P. B. Rodin, P. Rodin, P.B Rodin, P.B. Rodin, Pavel Rodin, Rodin P. B., Rodin P.B., Rodin, P., П.Б. Родин
ORCID: 0000-0002-7996-2645
Observed ORCID: 0000-0002-7996-2645
OpenAlex ID: A5084897895
Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors
2008 · I.V. Grekhov, S.V. Korotkov, et al. · IEEE Transactions on Plasma Science · 73
Tunneling-assisted impact ionization fronts in semiconductors
2002 · Pavel Rodin, Ute Ebert, et al. · Journal of Applied Physics · 57
Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics
2000 · M. Meixner, P. Rodin, et al. · The European Physical Journal B · 52
Superfast fronts of impact ionization in initially unbiased layered semiconductor structures
2002 · P. Rodin, U. Ebert, et al. · Journal of Applied Physics · 45
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Stability of current filaments in a bistable semiconductor system with global coupling
1998 · A. Alekseev, S. Bose, et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 45
Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress
2004 · M. Denison, M. Blaho, et al. · IEEE Transactions on Electron Devices · 42
Stabilization of complex spatio-temporal dynamics near a subcritical Hopf bifurcation by time-delayed feedback
2009 · M. Kehrt, P. Hövel, et al. · The European Physical Journal B · 39
Breathing current domains in globally coupled electrochemical systems: A comparison with a semiconductor model
2001 · F. Plenge, P. Rodin, et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 39
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Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures
2005 · Pavel Rodin, Anna Rodina, et al. · Journal of Applied Physics · 37
Competing spatial and temporal instabilities in a globally coupled bistable semiconductor system near a codimension-two bifurcation
2000 · S. Bose, P. Rodin, et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 31
Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures
2016 · Viktor I. Brylevskiy, Irina A. Smirnova, et al. · IEEE Transactions on Plasma Science · 28
Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress
2004 · M. Denison, M. Blaho, et al. · IEEE Transactions on Electron Devices · 28
Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior
2017 · Viktor Brylevskiy, Irina Smirnova, et al. · Journal of Applied Physics · 24
Thermally-driven motion of current filaments in ESD protection devices
2005 · D. Pogany, S. Bychikhin, et al. · Solid-State Electronics · 21
Effect of distributed-gate control on current filamentation in thyristors
1992 · A.V. Gorbatyuk, P.B. Rodin · Solid-State Electronics · 21
Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: Experiments vs simulations
2022 · Mikhail Ivanov, Viktor Brylevskiy, et al. · Journal of Applied Physics · 20
Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes
2012 · P. B. Rodin, A. M. Minarsky, et al. · Technical Physics Letters · 19
Theory of traveling filaments in bistable semiconductor structures
2004 · Pavel Rodin · Physical Review B · 19
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Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers
2009 · D. Pogany, D. Johnsson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Current filamentation in bistable semiconductor systems with two global constraints
1997 · A. V. Gorbatyuk, P. B. Rodin · Zeitschrift für Physik B Condensed Matter · 18
Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP
2011 · D. Pogany, D. Johnsson, et al. · IEEE Transactions on Electron Devices · 17
Transverse coupling in bistable resonant-tunneling structures
2000 · V. Cheianov, P. Rodin, et al. · Physical review. B, Condensed matter · 17
Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching
2015 · V. I. Brylevskii, A. V. Rozhkov, et al. · Technical Physics Letters · 16
Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures
2006 · Pavel Rodin, Pavel Ivanov, et al. · Journal of Applied Physics · 16
Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: From subnano to picosecond range
2020 · Pavel Rodin, Mikhail Ivanov · Journal of Applied Physics · 15
Works count: 77
Citation count: 956
H-index: 18
I10-index: 33
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