Author

A. Dörnen

Observed names: A Dörnen, A. Dornen, A. DÖrnen, A. Döornen, Achim DÖrnen, Achim Dörnen, Dörnen, Achim

Institution: University of Stuttgart

Observed institutions: University of Stuttgart, Lehigh University, Max Planck Institute for Solid State Research

OpenAlex ID: A5085544072

Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN

1996 · D. Haase, M. Schmid, et al. · Applied Physics Letters · 164

Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

1990 · J. Schneider, H. D. Müller, et al. · Applied Physics Letters · 154

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

1989 · W. Kürner, R. Sauer, et al. · Physical review. B, Condensed matter · 70

Self-assembled InAs/GaAs quantum dots under resonant excitation

1998 · F. Adler, M. Geiger, et al. · Journal of Applied Physics · 66

Refractive index of (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy

1994 · M. Moser, R. Winterhoff, et al. · Applied Physics Letters · 49

Low pressure MOVPE of GaN and heterostructures

1997 · F. Scholz, V. Härle, et al. · Journal of Crystal Growth · 38

Crystal-field model of vanadium in 6H silicon carbide

1997 · B. Kaufmann, A. Dörnen, et al. · Physical review. B, Condensed matter · 37

Donorlike excited states of the thermally induced 0.767-eV ( P line) defect in oxygen-rich silicon

1985 · J. Wagner, A. Dörnen, et al. · Physical review. B, Condensed matter · 37

In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

1997 · F Scholz, A Sohmer, et al. · Materials Science and Engineering B · 32

Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

1997 · F. Scholz, V. Härle, et al. · Solid-State Electronics · 30

Ordering effects on optical transitions in GaxIn1−xP/(Al0.66Ga0.34)yIn1−yP quantum wells studied by photoluminescence and reflectivity spectroscopy

2003 · Jun Shao, Rolf Winterhoff, et al. · Physical review. B, Condensed matter · 28

GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

1997 · A. Sohmer, J. Off, et al. · MRS Internet Journal of Nitride Semiconductor Research · 28

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Movpe of Rare Earth Doped III-V Semiconductors

1993 · F. Scholz, J. Weber, et al. · MRS Proceedings · 28

Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells

1996 · F. Scholz, V. HÄrle, et al. · MRS Proceedings · 26

Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy

1992 · K. Pressel, G. Rückert, et al. · Physical review. B, Condensed matter · 26

Optical studies on InP:Fe by Fourier-transform emission and absorption spectroscopy

1991 · K. Pressel, K. Thonke, et al. · Physical review. B, Condensed matter · 26

1987 · A. Dörnen, G. Pensl, et al. · Physical review. B, Condensed matter · 26

Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide

1992 · Achim Dörnen, Ya.I. Latushko, et al. · Materials science forum · 23

MOVPE of GaInN heterostructures and quantum wells

1998 · Ferdinand Scholz, Jürgen Off, et al. · Journal of Crystal Growth · 21

Fe2+ in GaP studied by Fourier-transform emission and absorption spectroscopy

1992 · G. Rückert, K. Pressel, et al. · Physical review. B, Condensed matter · 20

Ordering parameter and band-offset determination for ordered GaxIn1−xP/(Al0.66Ga0.34)yIn1−yP quantum wells

2002 · Jun Shao, Achim Dörnen, et al. · Physical review. B, Condensed matter · 19

Optical study of spin-flip transitions at Fe3+ in InP

1993 · K. Pressel, G. Bohnert, et al. · Physical review. B, Condensed matter · 19

Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction

1989 · A. Dörnen, R. Kienle, et al. · Physical review. B, Condensed matter · 18

Nitrogen-carbon radiative defect at 0.746 eV in silicon

1986 · A. Dörnen, G. Pensl, et al. · Physical review. B, Condensed matter · 18

Growth and characterization of GaSb bulk crystals with low acceptor concentration

1996 · A. N. Danilewsky, S. Lauer, et al. · Journal of Electronic Materials · 17

Works count: 79

Citation count: 1,274

H-index: 20

I10-index: 36