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Ferdinando Portuese

Observed name: F. Portuese
OpenAlex ID: A5085648505
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
2006 · Stefano Leone, Marco Mauceri, et al. · Materials science forum · 29
High growth rate process in a SiC horizontal CVD reactor using HCl
2005 · F. La Via, G. Galvagno, et al. · Microelectronic Engineering · 24
Very High Growth Rate Epitaxy Processes with Chlorine Addition
2007 · Francesco La Via, Stefano Leone, et al. · Materials science forum · 15
Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
2006 · Francesco La Via, G. Galvagno, et al. · Materials science forum · 15
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
2008 · Francesco La Via, Gaetano Izzo, et al. · Materials science forum · 9
Carbonization Study of Different Silicon Orientations
2007 · Andrea Severino, Corrado Bongiorno, et al. · Materials science forum · 5
Temperature dependence of the c-axis drift mobility in 4H–SiC
2005 · G. Galvagno, F. Roccaforte, et al. · Microelectronic Engineering · 5
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
2008 · Giuseppe Condorelli, Marco Mauceri, et al. · Materials science forum · 4
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
2006 · Francesco La Via, Giuseppa Galvagno, et al. · MRS Proceedings · 4
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
2007 · Lucia Calcagno, Gaetano Izzo, et al. · Materials science forum · 3
e-Infrastructures for Cultural Heritage Applications
2011 · Giuseppe Andronico, Antonio Calanducci, et al. · IGI Global eBooks · 2
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
2006 · Stefano Leone, Marco Mauceri, et al. · Materials science forum · 2
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
2006 · Francesco La Via, G. Galvagno, et al. · Materials science forum · 1
Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
2006 · Francesco La Via, G. Galvagno, et al. · Materials science forum · 1
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
2007 · Lucia Calcagno, Gaetano Izzo, et al. · Materials science forum
Very High Growth Rate Epitaxy Processes with Chlorine Addition
2007 · Francesco La Via, Stefano Leone, et al. · Materials science forum
Carbonization Study of Different Silicon Orientations
2007 · Andrea Severino, Corrado Bongiorno, et al. · Materials science forum
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
2006 · Francesco La Via, G. Galvagno, et al. · Materials science forum
High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
2006 · Francesco La Via, Giuseppa Galvagno, et al. · MRS Proceedings
Works count: 19
Citation count: 119
H-index: 5
I10-index: 4
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