Author

D. I. Kryzhkov

Observed names: D.I Kryzhkov, D.I. Kryzhkov, Denis I. Kryzhkov, Kryzhkov, D.I., Kryzhkov, Denis I., Д.И. Крыжков

Institutions: Russian Academy of Sciences, Institute for Physics of Microstructures, N. I. Lobachevsky State University of Nizhny Novgorod

Observed institutions: Russian Academy of Sciences, Institute for Physics of Microstructures, N. I. Lobachevsky State University of Nizhny Novgorod

OpenAlex ID: A5086397196

Sensitization of NIR luminescence of Yb 3+ by Zn 2+ chromophores in heterometallic complexes with a bridging Schiff-base ligand

2017 · Anatoly P. Pushkarev, Tatyana V. Balashova, et al. · Dalton Transactions · 22

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Lanthanide complexes with substituted naphtholate ligands: extraordinary bright near-infrared luminescence of ytterbium

2013 · A. P. Pushkarev, V. A. Ilichev, et al. · Russian Chemical Bulletin · 22

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

2006 · Zakhary F. Krasilnik, Boris A. Andreev, et al. · Journal of materials research/Pratt's guide to venture capital sources · 19

Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping

2013 · S. V. Morozov, D. I. Kryzhkov, et al. · Journal of Applied Physics · 16

Smbe Grown Uniformly And Selectively Doped Si:Er Structures For Leds And Lasers

2003 · Z. F. Krasilnik, V. Ya. Aleshkin, et al. · Springer eBooks · 11

Tris(trifluoromethyl)germylethynyl derivatives of biphenyl and anthracene: Synthesis, structure, and evidence of the intramolecular charge transfer on the germanium center

2015 · Nikolai L. Ermolaev, Ilya V. Lenin, et al. · Journal of Organometallic Chemistry · 10

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

2003 · V.V. Emtsev, B.A. Andreev, et al. · Physica B Condensed Matter · 9

Er-Doped Electro-Optical Memory Element for 1.5-$\mu$ m Silicon Photonics

2006 · Tom Gregorkiewicz, Boris A. Andreev, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 7

Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures

2004 · B. A. Andreev, Z. F. Krasil’nik, et al. · Physics of the Solid State · 7

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon

2002 · B. A. Andreev, V. V. Emtsev, et al. · physica status solidi (b) · 7

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

2012 · B. A. Andreev, Z. F. Krasilnik, et al. · Semiconductors · 6

Luminescent properties of MBE-grown Si:Er/SOI structures

2012 · B.A. Andreev, Z.F. Krasilnik, et al. · Journal of Luminescence · 6

1.54 μ m Si:Er light emitting diode with memory function

2006 · B. A. Andreev, Z. F. Krasilnik, et al. · Applied Physics Letters · 6

Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

2015 · B. N. Zvonkov, O. V. Vikhrova, et al. · Semiconductors · 5

Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

2012 · V. Ya. Aleshkin, A. A. Dubinov, et al. · Semiconductors · 5

Phase transitions in erbium-doped silicon exposed to laser radiation

2009 · R. I. Batalov, R. M. Bayazitov, et al. · Journal of Applied Spectroscopy · 5

Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications

2005 · Zakhary F. Krasilnik, Boris A. Andreev, et al. · MRS Proceedings · 5

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

2003 · V.B Shmagin, V.P Kuznetsov, et al. · Materials Science and Engineering B · 5

Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

2015 · K. E. Kudryavtsev, D. I. Kryzhkov, et al. · Journal of Experimental and Theoretical Physics Letters · 4

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

2014 · S. V. Morozov, D. I. Kryzhkov, et al. · Applied Physics Letters · 4

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

2012 · S. V. Morozov, D. I. Kryzhkov, et al. · Semiconductors · 4

Tris(trifluoromethyl)germyl biphenyl conjugated molecular system with ferrocenyl substituent: Confirmation of photoinduced intramolecular charge transfer to the germanium center

2022 · Nikolai L. Ermolaev, Georgy K. Fukin, et al. · Journal of Organometallic Chemistry · 3

Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

2012 · S. N. Nagornykh, V. I. Pavlenkov, et al. · Technical Physics · 3

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

2012 · A. N. Yablonskiy, B. A. Andreev, et al. · Semiconductors · 3

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

2010 · A. N. Yablonskiy, B. A. Andreev, et al. · Semiconductors · 3

Works count: 59

Citation count: 217

H-index: 7

I10-index: 6