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Nawal Benyahya

Observed names: N. BENYAHYA, N. Benyahya, N., Benyahya
OpenAlex ID: A5090708808
Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate
2020 · Halima Mazari, Kheira Ameur, et al. · Experimental and Theoretical NANOTECHNOLOGY · 4
Simulation of the GaAsN-based Schottky solar cell prototype
2019 · A. Boumesjed, H. Mazari, et al. · International Journal of Ambient Energy · 2
Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)
2014 · Kheira Ameur, Halima Mazari, et al. · International Journal of Materials Engineering Innovation · 2
Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
2013 · N. Benyahya, H. Mazari, et al. · Optical and Quantum Electronics · 2
Numerical simulation of solar cells based on III–V nitride compounds
2013 · K. Ameur, Z. Benamara, et al. · Optical and Quantum Electronics · 1
Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes
2013 · R., Khelifi, H., Mazari, et al. · HAL · 1
GaAs1-xNx candidate material for a high efficiency based homojunction solar cell
2021 · H. Mazari, K. Ameur, et al. · Experimental and Theoretical NANOTECHNOLOGY
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Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
2014 · H. MAZARI, K. AMEUR, et al. · DOAJ (DOAJ: Directory of Open Access Journals)
Electrical characterisation of Schottky diodes based on SiC with different contact surfaces
2014 · Nadia Benseddik, Halima Mazari, et al. · International Journal of Materials Engineering Innovation
Works count: 11
Citation count: 15
H-index: 2
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