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C. D. Moore

Observed names: C D Moore, C.D Moore, C.D. Moore
OpenAlex ID: A5102425140
Thermal conductivity of nanoporous bismuth thin films
2004 · D. W. Song, W.-N. Shen, et al. · Applied Physics Letters · 81
A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface
1999 · J. L. Liu, C. D. Moore, et al. · Applied Physics Letters · 72
Bridgman solidification of GaSb in space
1998 · T. Duffar, M.D. Serrano, et al. · Journal of Crystal Growth · 47
Effective compliant substrate for low-dislocation relaxed SiGe growth
2001 · Y. H. Luo, J. L. Liu, et al. · Applied Physics Letters · 33
Synthesis of nanoporous bismuth films by liquid-phase deposition
2000 · W.‐N. Shen, B. Dunn, et al. · Journal of Materials Chemistry · 19
Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications
2000 · J.L Liu, K.L Wang, et al. · Thin Solid Films · 10
Low-dislocation relaxed SiGe grown on an effective compliant substrate
2000 · Y. H. Luo, J. L. Liu, et al. · Journal of Electronic Materials · 10
Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe
2000 · T. T. Lam, C. D. Moore, et al. · Journal of Electronic Materials · 10
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
1999 · R. S. Sandhu, G. Bhasin, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
Lattice tilt and relaxation in InGaP/GaAs/Ge solar cells on miscut substrates
1999 · R R Hess, C D Moore, et al. · Journal of Physics D Applied Physics · 9
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Thermal conductivity of Si/Ge superlattices
2003 · T. Borca-Tasciuc, Weili Liu, et al. · International Conference on Thermoelectrics (ICT) · 7
Reciprocal space mapping of ordered domains in InxGa1−xP
2000 · R. R. Hess, C. D. Moore, et al. · Journal of Electronic Materials · 4
Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures
1999 · J Leininger, G D U'Ren, et al. · Journal of Physics D Applied Physics · 3
X-Ray characterisation of indium phosphide substrates
1999 · C.D. Moore, B.K. Tanner · Materials Science and Engineering B · 2
Triple-axis X-ray diffraction study of polishing damage in III-V semiconductors
1997 · C. D. Moore, I. Pape, et al. · Il Nuovo Cimento D · 2
Preparation and Properties of Porous Bismuth Films
1998 · W. -N. Shen, B. Dunn, et al. · MRS Proceedings · 1
Triple-axis X-ray diffraction study of polishing damage in III–V semiconductors
1996 · C. D. Moore, I. Pape, et al. · Acta Crystallographica Section A Foundations of Crystallography · 1
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High Resolution X-ray Diffractometry and Topography of Float-Zone GaAs Crystals Grown in Microgravity
1994 · N. Loxley, C. D. Moore, et al. · Advances in X-ray Analysis · 1
Substrate crystallinity and the performance of InP-based pseudomorphic high electron mobility transistors
2002 · M.S. Goorsky, R. Sandhu, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
High-resolution X-ray diffraction determination of composition grading in Hg1-xMnxTe grown by interdiffused multilayer organometallic vapour-phase epitaxy
1999 · C. D. Moore, B. K. Tanner · Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences
Grazing Incidence X-ray Scattering for the Characterisation of InP Wafers
1997 · C. D. Moore, T. P. A. Hase
High Resolution X-Ray Diffractometry and Topography of Float-Zone GaAs Crystals Grown in Microgravity
1995 · N. Loxley, C. D. Moore, et al. · Springer eBooks
Works count: 22
Citation count: 322
H-index: 9
I10-index: 9
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