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G. Zhao
Observed names:
G Zhao,
G. Y. ZHAO,
G. Y. Zhao,
G.Y Zhao,
G.Y. Zhao,
G. Y. Zhao,
Guang Tao Zhao,
Guojun Zhao
show all 8
Institution:
Inner Mongolia University
Observed institutions:
University of Connecticut,
Nagoya Institute of Technology,
Inner Mongolia University,
University of Michigan,
Technische Universität Darmstadt,
Shaanxi Normal University
show all 6
ORCID:
0000-0002-0355-0732
Observed ORCID:
0000-0002-0355-0732
OpenAlex ID:
A5102811145
Amphoteric Phosphorus Doping for Stable p‐Type ZnO
2007
·
A. Allenic
, W. Guo
, et al.
·
Advanced Materials
·
86
PDF
High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer
1999
·
H. Ishikawa
, G. Y. Zhao
, et al.
·
physica status solidi (a)
·
73
High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
2005
·
S.M. Hubbard
, G. Zhao
, et al.
·
Journal of Crystal Growth
·
58
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
·
H. Jiang
, G. Y. Zhao
, et al.
·
Journal of Applied Physics
·
54
Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
2001
·
B. J. Zhang
, T. Egawa
, et al.
·
Applied Physics Letters
·
37
Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition
2000
·
G. Y. Zhao
, M. Adachi
, et al.
·
Applied Physics Letters
·
24
Power characteristics of AlN/GaN MISFETs on sapphire substrate
2008
·
S. Seo
, G.Y. Zhao
, et al.
·
Electronics Letters
·
22
Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls
1998
·
X. G. Zhang
, P. Li
, et al.
·
Journal of Electronic Materials
·
22
Technology aspects of GaN-based diodes for high-field operation
2006
·
Kabula Mutamba
, Oktay Yilmazoglu
, et al.
·
Superlattices and Microstructures
·
19
Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication
1999
·
X. G. Zhang
, P. Li
, et al.
·
Journal of Electronic Materials
·
19
Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition
1998
·
G. Y. Zhao
, H. Ishikawa
, et al.
·
Applied Physics Letters
·
18
PDF
X-ray rocking curve analysis of tetragonally distorted ternary semiconductors on mismatched (001) substrates
2000
·
X. G. Zhang
, D. W. Parent
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
16
PDF
Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode
1997
·
G. Y. Zhao
, G. Yu
, et al.
·
Applied Physics Letters
·
15
PDF
Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target
2007
·
A. Allenic
, W. Guo
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
13
Electron mobility on AlGaN/GaN heterostructure interface
2000
·
G.Y Zhao
, H Ishikawa
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
13
Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition
1994
·
Q. J. Xing
, J. L. Brebner
, et al.
·
Applied Physics Letters
·
11
Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy
1997
·
X. G. Zhang
, S. Kalisetty
, et al.
·
Journal of Electronic Materials
·
8
Structural properties of ZnSySe1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy
1997
·
X.G. Zhang
, S. Kalisetty
, et al.
·
Journal of Crystal Growth
·
8
Observation of persistent photoconductivity in GaxIn1-xP/InP:Fe (0<or=x<0.18)
1992
·
Y G Zhao
, G Zhao
, et al.
·
Semiconductor Science and Technology
·
7
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
2008
·
S. SEO
, K. GHOSE
, et al.
·
IEICE Transactions on Electronics
·
5
Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
1998
·
G. Y. Zhao
, Hiroshi Ebisu
, et al.
·
Japanese Journal of Applied Physics
·
4
PDF
Surface oxygen vacancy accumulation after magnetic field annealing for enhanced ferroelectric photovoltaics
2025
·
Kun Yao Liang
, Jing Hui Zeng
, et al.
·
Materials Science and Engineering B
·
3
The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan
2000
·
D. W. Parent
, A. Rodriguez
, et al.
·
Journal of Electronic Materials
·
3
Compositional control of Cd Zn1−Se grown by photoassisted organometallic vapor phase epitaxy
1997
·
K.X. Bao
, R. Mo
, et al.
·
Journal of Crystal Growth
·
3
Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24)
1993
·
Y.-G. Zhao
, J. L. Brebner
, et al.
·
Journal of Applied Physics
·
3
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Works count:
31
Citation count:
550
H-index:
13
I10-index:
16
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