Author

Chun-Yi Cheng

Observed names: C M Cheng, C. M. Cheng, C.-M. Cheng, C.M. Cheng

Institutions: National Taiwan University, National Synchrotron Radiation Research Center

Observed institutions: Ministry of Transportation and Communications, National Taiwan Ocean University, National Taiwan University of Science and Technology, Hefei University of Technology, National Taiwan University, University of Pittsburgh, National Tsing Hua University, National Synchrotron Radiation Research Center, National Science and Technology Council, University of Hong Kong, National Cheng Kung University

ORCID: 0000-0002-8570-3789

Observed ORCID: 0000-0002-8570-3789

OpenAlex ID: A5103197263

Strategies for photoluminescence enhancement of AgInS2 quantum dots and their application as bioimaging probes

2012 · Jia-Yaw Chang, Guo-Quan Wang, et al. · Journal of Materials Chemistry · 159

High-Energy Scale Revival and Giant Kink in the Dispersion of a Cuprate Superconductor

2007 · B. P. Xie, K. Yang, et al. · Physical Review Letters · 120

PDF

Optical potential for 12C + 28Si scattering

1977 · C.M. Cheng, J.V. Maher, et al. · Physics Letters B · 42

Facile one-pot synthesis of copper sulfide–metal chalcogenide anisotropic heteronanostructures in a noncoordinating solvent

2011 · Jia-Yaw Chang, Chun-Yi Cheng · Chemical Communications · 39

Growth and characterization of molecular beam epitaxy-grown Bi2Te3−xSex topological insulator alloys

2016 · Y. Tung, Y. F. Chiang, et al. · Journal of Applied Physics · 37

Energy dependences of (16O, 12C) transitions

1976 · J.C. Peng, J.V. Maher, et al. · Nuclear Physics A · 36

Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2

2017 · K. H. M. Chen, H. Y. Lin, et al. · Applied Physics Letters · 26

Anisotropy in the thermal hysteresis of resistivity and charge density wave nature of single crystal SrFeO3-δ: X-ray absorption and photoemission studies

2017 · S. H. Hsieh, R. S. Solanki, et al. · Scientific Reports · 22

PDF

Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch

2021 · Chien-Te Tu, Yu-Shiang Huang, et al. · IEEE Transactions on Electron Devices · 19

Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material

2017 · H.-T. Wang, M. K. Srivastava, et al. · Scientific Reports · 17

PDF

Spectroscopic and reaction mechanism information derived from Gd160(d,t)Gd159 and Gy162(d,t)Gy161 reaction measurements

1976 · J. C. Peng, J. V. Maher, et al. · Physical Review C · 16

Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching

2021 · Yi-Chun Liu, Chien-Te Tu, et al. · IEEE Transactions on Electron Devices · 15

Anomalous Spectral Features of a Neutral Bilayer Graphene

2015 · C.-M. Cheng, L.F. Xie, et al. · Scientific Reports · 15

PDF

Reaction dynamic dependences of ( O16 , N15 ) small angle cross sections

1976 · J. V. Maher, J. C. Peng, et al. · Physical Review C · 15

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels

2024 · Wan-Hsuan Hsieh, Chien-Te Tu, et al. · IEEE Transactions on Electron Devices · 12

First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels

2023 · Chien-Te Tu, Wan-Hsuan Hsieh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12

Vacuum system of the 3 GeV Taiwan photon source

2010 · J. R. Chen, G. Y. Hsiung, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 12

Novel Electronic Structure Induced by a Highly Strained Oxide Interface with Incommensurate Crystal Fields

2009 · H. W. Ou, J. F. Zhao, et al. · Physical Review Letters · 12

PDF

Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching

2022 · Bo-Wei Huang, Chung-En Tsai, et al. · IEEE Transactions on Electron Devices · 10

First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation

2022 · Chien-Te Tu, Yi-Chun Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9

Vacuum design for the 3 GeV TPS synchrotron light source

2008 · G Y Hsiung, C K Chan, et al. · Journal of Physics Conference Series · 9

PDF

Possible Recoil Effects in ( O16 , N15 ) Transitions About 10 MeV Above the Coulomb Barrier

1973 · T. J. Lewis, G. H. Wedberg, et al. · Physical Review C · 9

Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V

2023 · Yi-Chun Liu, Yu-Rui Chen, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 6

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

2022 · Chung-En Tsai, Chun-Yi Cheng, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 6

Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations

2018 · S. Ito, B. Feng, et al. · Physical review. B./Physical review. B · 6

PDF

Works count: 63

Citation count: 733

H-index: 14

I10-index: 19