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Yezhu Lv

Observed name: Lv, Yezhu
OpenAlex ID: A5109751190
Mobile charges in MoS2/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance
2026 · Shaokai Zhou, Haihui Cai, et al. · Communications Engineering · 2
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LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends
2024 · Yury Illarionov, Yezhu Lv, et al. · Nanomaterials · 2
Long-Term Operational Stability of Dual-Gated ITO/HfO 2 Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping
2026 · Jianming Huang, Arijit Sarkar, et al. · ACS Nano · 1
Mobile-Ion-Induced Transient NDR in MoS2 FETs: Optimization Insights and Figures of Merit via Compact Modeling
2026 · Shaokai Zhou, Yehao Wu, et al. · ACS Applied Electronic Materials
Understanding the impact of vdW gap on the reliability of nanoscale MoS2 FETs by TCAD modeling
2026 · Yezhu Lv, Yehao Wu, et al. · Microelectronic Engineering
Mobile charges in MoS2/high-k oxide transistors: from abnormal instabilities to memory-like dynamics
2026 · Zhou, Shaokai, Cai, Haihui, et al. · arXiv (Cornell University)
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Works count: 7
Citation count: 6
H-index: 2
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