Author

Konstantin V. Vassilevski

Observed names: K V Vassilevski, K Vassilevski, K. V. Vassilevski, K. Vasilevskiy, K. Vassilevski, K.V Vassilevski, K.V. Vassilevski, Konstantin Vasilevskiy, Konstantin Vassilevski

Institution: Newcastle University

Observed institutions: Russian Academy of Sciences, Wolfspeed, Inc. (United States), Newcastle University, Foundation for Research and Technology Hellas, Ioffe Institute

ORCID: 0000-0001-5631-8323

Observed ORCID: 0000-0001-5631-8323

OpenAlex ID: A5109974749

Prospects for SiC electronics and sensors

2008 · Nick G. Wright, Alton B. Horsfall, et al. · Materials Today · 236

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

2005 · I. P. Nikitina, K. V. Vassilevski, et al. · Journal of Applied Physics · 147

The sinusoidal probe: a new approach to improve electrode longevity

2014 · Harbaljit S. Sohal, Andrew Jackson, et al. · Frontiers in Neuroengineering · 104

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Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

1999 · G. Salviati, M. Albrecht, et al. · physica status solidi (a) · 90

Silicon Carbide and Related Materials 2016

2017 · Konstantinos Zekentes, Konstantin Vasilevskiy, et al. · Trans Tech Publications Ltd. eBooks · 73

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

2005 · K V Vassilevski, N G Wright, et al. · Semiconductor Science and Technology · 58

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Physical Properties of Bulk GaN Crystals Grown by HVPE

1997 · Yu.V. Melnik, K.V. Vassilevski, et al. · MRS Internet Journal of Nitride Semiconductor Research · 56

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Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2/ Al2O3Gate Stack

2018 · F. Arith, J. Urresti, et al. · IEEE Electron Device Letters · 49

Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes

2000 · K.V. Vassilevski, K. Zekentes, et al. · IEEE Electron Device Letters · 47

Silicon Carbide and Related Materials 2006

2007 · Nicholas G. Wright, C. Mark Johnson, et al. · Trans Tech Publications Ltd. eBooks · 42

Semi-transparent SiC Schottky diodes for X-ray spectroscopy

2007 · J.E. Lees, D.J. Bassford, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 41

4H-SiC IMPATT Diode Fabrication and Testing

2002 · Konstantin Vassilevski, A.V. Zorenko, et al. · Materials science forum · 39

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

2001 · K. Vassilevski, K. Zekentes, et al. · Materials Science and Engineering B · 36

Properties of Free-Standing GaN Bulk Crystals Grown by HVPE

1997 · YU. Melnik, A. Nikolaev, et al. · MRS Proceedings · 33

Device processing and characterisation of high temperature silicon carbide Schottky diodes

2005 · K.V. Vassilevski, I.P. Nikitina, et al. · Microelectronic Engineering · 31

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

2013 · Enrique Escobedo-Cousin, Konstantin Vassilevski, et al. · Journal of Applied Physics · 30

Structural pattern formation in titanium–nickel contacts on silicon carbide following high-temperature annealing

2006 · I P Nikitina, K V Vassilevski, et al. · Semiconductor Science and Technology · 27

4H-SiC rectifiers with dual metal planar Schottky contacts

2002 · K.V. Vassilevski, A.B. Horsfall, et al. · IEEE Transactions on Electron Devices · 26

Fabrication of GaN mesa structures

1996 · K.V. Vassilevski, M.G. Rastegaeva, et al. · MRS Internet Journal of Nitride Semiconductor Research · 25

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Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

2009 · I Nikitina, K Vassilevski, et al. · Semiconductor Science and Technology · 24

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Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance

2000 · K Vassilevski, K Zekentes, et al. · Solid-State Electronics · 24

4H-SiC Schottky diode arrays for X-ray detection

2016 · G. Lioliou, H.K. Chan, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 23

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Microwave p-i-n diodes and switches based on 4H-SiC

2006 · N. Camara, K. Zekentes, et al. · IEEE Electron Device Letters · 22

Experimental observation of microwave oscillationsproducedby pulsed silicon carbide IMPATT diode

2001 · K.V. Vassilevski, A.V. Zorenko, et al. · Electronics Letters · 22

Study of annealing conditions on the formation of ohmic contacts on p+ 4H–SiC layers grown by CVD and LPE

1999 · K.V Vassilevski, G Constantinidis, et al. · Materials Science and Engineering B · 22

Works count: 195

Citation count: 1,743

H-index: 22

I10-index: 42