Get started
Author

Nancy R. Klymko

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
2004 · K. Rim, K. Chan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 157
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding
2008 · F. Liu, R. R. Yu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 117
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
2012 · K. Cheng, A. Khakifirooz, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 77
Challenges of nickel silicidation in CMOS technologies
2014 · Nicolas Breil, Christian Lavoie, et al. · Microelectronic Engineering · 59
Oxygen induced adhesion degradation at metal/polyimide interface
1991 · Da-Yuan Shih, Nancy Klymko, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 50
A study of the chemical and physical interaction between copper and polyimide
1989 · D-Y. Shih, J. Paraszczak, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 45
Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
2003 · T. S. Drake, C. Nı́ Chléirigh, et al. · Applied Physics Letters · 43
Fabrication of ultra-thin strained silicon on insulator
2003 · T. S. Drake, C. Ní Chléirigh, et al. · Journal of Electronic Materials · 33
Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress
2008 · M. Belyansky, M. Chace, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 32
Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications
2011 · Kingsuk Maitra, Ali Khakifirooz, et al. · IEEE Electron Device Letters · 27
Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates
2005 · Qiqing Ouyang, Min Yang, et al. · Symposium on VLSI Technology · 26
Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in Strained-Si N-Channel MOSFETs
2004 · G. Xia, H.M. Nayfeh, et al. · IEEE Transactions on Electron Devices · 24
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
2004 · D. Edelstein, H. Rathore, et al. · IEEE International Reliability Physics Symposium proceedings · 23
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
2004 · D. Edelstein, C. Davis, et al. · IEEE International Interconnect Technology Conference (IITC) · 18
Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
2014 · K. Cheng, S. Seo, et al. · Symposium on VLSI Technology · 17
Strain characterization: techniques and applications
2009 · Michael Belyansky, A. Domenicucci, et al. · Solid State Technology · 14
Effects of chemical mechanical polishing on a porous SiCOH dielectric
2011 · S. Gates, S. Papa Rao, et al. · Microelectronic Engineering · 12
Optimization of SiCOH dielectrics for integration in a 90nm CMOS technology
2004 · A. Grill, D. Edelstein, et al. · IEEE International Interconnect Technology Conference (IITC) · 11
Thermo-Mechanical Response of Thru-Silicon Vias Under Local Thermal Transients Using Experimentally Validated Finite Element Models
2011 · Jamil A. Wakil, Patrick W. Dehaven, et al. · Journal of Electronic Packaging · 10
65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH
2006 · V. McGahay, G. Bonilla, et al. · International Interconnect Technology Conference · 9
Study of silicon strain in shallow trench isolation
2010 · M. Belyansky, N. Klymko, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 7
Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures
2004 · P.M. Mooney, G.M. Cohen, et al. · MRS Proceedings · 6
Evaluation of Barrier CMP Slurries and Characterization of ULK Material Properties Shifts Due to CMP
2008 · Wei-Tsu Tseng, Dimitri Kioussis, et al. · ECS Transactions · 5
PDF
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
2006 · R. Yu, F. Liu, et al. · Symposium on VLSI Technology · 5
Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors
2013 · M. Jin, C. E. Tian, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Works count: 45
Citation count: 856
H-index: 15
I10-index: 19
Year
Topic
Type