Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Katsuhiko Koi
Observed names:
K Koi,
K. Koi,
Koi, Katsuhiko
Institution:
KIOXIA Corporation (Japan)
Observed institutions:
Toshiba (Japan),
KIOXIA Corporation (Japan)
OpenAlex ID:
A5110023086
The applicability of CPP-GMR heads for magnetic recording
2002
·
M. Takagishi
, K. Koi
, et al.
·
IEEE Transactions on Magnetics
·
140
MR Ratio Enhancement by NOL Current-Confined-Path Structures in CPP Spin Valves
2004
·
H. Fukuzawa
, H. Yuasa
, et al.
·
IEEE Transactions on Magnetics
·
107
Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry
2002
·
H. Yuasa
, M. Yoshikawa
, et al.
·
Journal of Applied Physics
·
100
Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density
2016
·
H. Yoda
, N. Shimomura
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
83
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
2017
·
T. Inokuchi
, H. Yoda
, et al.
·
Applied Physics Letters
·
44
Specular spin-valve films with an FeCo nano-oxide layer by ion-assisted oxidation
2002
·
Hideaki Fukuzawa
, Katsuhiko Koi
, et al.
·
Journal of Applied Physics
·
41
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system
2018
·
Yushi Kato
, Hiroaki Yoda
, et al.
·
Applied Physics Express
·
38
PDF
Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode
2017
·
S. Shirotori
, H. Yoda
, et al.
·
IEEE Transactions on Magnetics
·
37
Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode
2018
·
Y. Kato
, Y. Saito
, et al.
·
Physical Review Applied
·
34
Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)
2019
·
T. Inokuchi
, H. Yoda
, et al.
·
Applied Physics Letters
·
24
NOL specular spin-valve heads using an ultrathin CoFe free layer
2001
·
Hideaki Fukuzawa
, Katsuhiko Koi
, et al.
·
Journal of Magnetism and Magnetic Materials
·
24
Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement
2001
·
S. Sant
, M. Mao
, et al.
·
Journal of Applied Physics
·
22
Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance
2005
·
H. Fukuzawa
, H. Yuasa
, et al.
·
Journal of Applied Physics
·
15
Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers
2002
·
Hideaki Fukuzawa
, Yuzo Kamiguchi
, et al.
·
Journal of Applied Physics
·
14
Analysis of Effective Field Gradient in Microwave-Assisted Magnetic Recording
2014
·
Naoyuki Narita
, Kenichiro Yamada
, et al.
·
IEEE Transactions on Magnetics
·
13
14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM
2023
·
Masahiko Nakayama
, Soichi Oikawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
12
Magnetic properties of specular spin-valves containing nano-oxide layers
2001
·
J.C.S. Kools
, S.B. Sant
, et al.
·
IEEE Transactions on Magnetics
·
12
Soft magnetic characteristics of an ultrathin CoFeNi free layer in spin-valve films
2005
·
Hideaki Fukuzawa
, Hitoshi Iwasaki
, et al.
·
Journal of Magnetism and Magnetic Materials
·
11
Spin-filter spin-valve films with an ultrathin CoFe free layer
2001
·
H. Fukuzawa
, H. Iwasaki
, et al.
·
Journal of Applied Physics
·
9
Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
2019
·
Yushi Kato
, Hiroaki Yoda
, et al.
·
Journal of Magnetism and Magnetic Materials
·
6
From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems with Lower Energy Consumption
2019
·
H. Yoda
, Y. Ohsawa
, et al.
·
Journal of Magnetics
·
5
Voltage-control spintronics memory (VoCSM) toward development of a 4F2-cell with strained in-plane-MTJ
2019
·
Y. Ohsawa
, H. Yoda
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
5
Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning
2018
·
Y. Ohsawa
, H. Yoda
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
5
Spin filter spin valve heads with ultrathin CoFe free layers
1999
·
H. Iwasaki
, H. Fukuzawa
, et al.
·
IEEE International Magnetics Conference
·
5
Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM
2024
·
Rina Takashima
, Takeo Koike
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
Show more works
View as search
Works count:
48
Citation count:
830
H-index:
14
I10-index:
18
Year
Topic
Type