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Author

Masao Nishioka

Observed names: M Nishioka, M. NISHIOKA, M. Nishioka, M.N. Nishioka, Masao NISHIOKA, Masao Nishioka Masao Nishioka, Nishioka M, Nishioka M (Nishioka Masao), Nishioka M (Nishioka, Masao), Nishioka Masao, Nishioka, Masao, 政雄 西岡, 西岡 政雄, 西岡, 政雄, 西岡政雄
Observed institutions: Centre National de la Recherche Scientifique, University of Michigan, Laboratory for Integrated Micro-Mechatronic Systems, Institute for Nano Quantum Information Electronics, The University of Tokyo, Research Center for Advanced Science and Technology, The University of Tokyo, Institute of Industrial Science, The University of Tokyo, Technische Universität Berlin, The University of Tokyo
OpenAlex ID: A5110040748
Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity
1992 · C. Weisbuch, M. Nishioka, et al. · Physical Review Letters · 2,555
Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
1999 · Y. Toda, O. Moriwaki, et al. · Physical Review Letters · 364
Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
2001 · Jun Tatebayashi, Masao Nishioka, et al. · Applied Physics Letters · 271
Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
2010 · Denis Guimard, Ryo Morihara, et al. · Applied Physics Letters · 243
Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
1994 · J. Oshinowo, M. Nishioka, et al. · Applied Physics Letters · 243
Time-resolved vacuum Rabi oscillations in a semiconductor quantum microcavity
1994 · T. B. Norris, J.-K. Rhee, et al. · Physical review. B, Condensed matter · 204
Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity
2008 · Kanna Aoki, Denis Guimard, et al. · Nature Photonics · 186
In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
1995 · M. Kitamura, M. Nishioka, et al. · Applied Physics Letters · 170
Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition
1992 · S. Tsukamoto, Y. Nagamune, et al. · Journal of Applied Physics · 167
Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fields
1992 · Y. Nagamune, Y. Arakawa, et al. · Physical Review Letters · 145
Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth
1993 · S. Tsukamoto, Y. Nagamune, et al. · Applied Physics Letters · 87
Recombination lifetime of carriers in GaAs-GaAlAs quantum wells near room temperature
1985 · Yasuhiko Arakawa, Hiroyuki Sakaki, et al. · Applied Physics Letters · 68
GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth
1994 · Y. Nagamune, M. Nishioka, et al. · Applied Physics Letters · 65
Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition
2004 · Tao Yang, Jun Tatebayashi, et al. · Applied Physics Letters · 62
Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growth
1993 · S. Tsukamoto, Y. Nagamune, et al. · Applied Physics Letters · 60
Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots
2000 · Y. Toda, T. Sugimoto, et al. · Applied Physics Letters · 57
Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells
1991 · T. Yamauchi, Y. Arakawa, et al. · Applied Physics Letters · 57
Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
2012 · J. Tatebayashi, Y. Ota, et al. · Applied Physics Letters · 55
High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition
2006 · Denis Guimard, Masao Nishioka, et al. · Applied Physics Letters · 52
Area-controlled growth of InAs quantum dots and improvement of density and size distribution
2000 · Jun Tatebayashi, Masao Nishioka, et al. · Applied Physics Letters · 48
Femtosecond dynamics of semiconductor-microcavity polaritons in the nonlinear regime
1996 · J.-K. Rhee, D.S. Citrin, et al. · Solid State Communications · 47
Picosecond pulse generation (<1.8 ps) in a quantum well laser by a gain switching method
1987 · Y. Arakawa, T. Sogawa, et al. · Applied Physics Letters · 46
Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth
1993 · Y. Nagamune, S. Tsukamoto, et al. · Journal of Crystal Growth · 44
Light emission from zero-dimensional excitons—Photoluminescence from quantum wells in strong magnetic fields
1985 · H. Sakaki, Y. Arakawa, et al. · Applied Physics Letters · 44
Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
2010 · Damien Bordel, Denis Guimard, et al. · Applied Physics Letters · 42
Works count: 224
Citation count: 6,589
H-index: 33
I10-index: 69
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