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K. Tsunoda
Institution:
Fujitsu (Japan)
Observed institution:
Fujitsu (Japan)
OpenAlex ID:
A5110043691
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
2008
·
K. Kinoshita
, K. Tsunoda
, et al.
·
Applied Physics Letters
·
276
Bipolar resistive switching in polycrystalline TiO2 films
2007
·
K. Tsunoda
, Y. Fukuzumi
, et al.
·
Applied Physics Letters
·
216
Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V
2007
·
K. Tsunoda
, K. Kinoshita
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
166
Demonstration of non-volatile working memory through interface engineering in STT-MRAM
2012
·
C. Yoshida
, T. Ochiai
, et al.
·
Symposium on VLSI Technology
·
32
Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter
2007
·
K. Kinoshita
, K. Tsunoda
, et al.
·
IEEE International Memory Workshop (IMW)
·
21
Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model
2014
·
K. Tsunoda
, M. Aoki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
13
Highly manufacturable multi-level perpendicular MTJ with a single top-pinned layer and multiple barrier/free layers
2013
·
K. Tsunoda
, M. Aoki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
A highly scalable STT-MRAM fabricated by a novel technique for shrinking a magnetic tunnel junction with reducing processing damage
2014
·
Y. Iba
, A. Takahashi
, et al.
·
Symposium on VLSI Technology
·
7
A novel MTJ for STT-MRAM with a dummy free layer and dual tunnel junctions
2012
·
K. Tsunoda
, H. Noshiro
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
7
Thermal instability of GaSb surface oxide
2016
·
K. Tsunoda
, Y. Matsukura
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
6
Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM
2013
·
Y. Iba
, Chikako Yoshida
, et al.
·
Symposium on VLSI Technology
·
6
MgO Based Magnetic Tunnel Junctions With Co$_{20}$Fe$_{60}$B$_{20}$ Sensing Layer for Magnetic Field Sensors
2013
·
T. Takenaga
, C. Yoshida
, et al.
·
IEEE Transactions on Magnetics
·
5
Batteryless sensorless bicycle speed recorder with hub dynamo and STT-MRAM
2015
·
A. Tanaka
, T. Douseki
, et al.
·
Proceedings of IEEE Sensors/Proceedings of IEEE Sensors ...
·
4
Strain-engineering for high-performance STT-MRAM
2011
·
Y. Iba
, K. Tsunoda
, et al.
·
Symposium on VLSI Technology
·
3
Ultra-high speed Direct Tunneling Memory (DTM) for embedded RAM applications
2004
·
K. Tsunoda
, A. Sato
, et al.
·
Symposium on VLSI Technology
·
3
Scalable sensing of interconnect current with magnetic tunnel junctions embedded in Cu interconnects
2013
·
T. Takenaga
, Y. Tsuzaki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
Chemical Vapor Deposition and Electrode Technologies for (Ba,Sr)TiO3 Capacitor Used in Gigabit Dram
1999
·
K. Eguchi
, K. Hieda
, et al.
·
MRS Proceedings
·
1
Circuitry Operating Simulation of High-Speed 90-nm Embedded ReRAM Array
2008
·
Y. Sato
, K. Tsunoda
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
18
Citation count:
775
H-index:
7
I10-index:
6
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