Author

Je‐Hun Lee

Observed names: JE-HUN LEE, Je-Hun Lee, Jehun Lee

Observed institutions: Kookmin University, Seoul National University, Electronics and Telecommunications Research Institute, Indian Institute of Technology Kharagpur, Korea Advanced Institute of Science and Technology, Gyeongsang National University, Korea University, Samsung (South Korea), American Ceramic Society, Samsung Electronics (South Korea), Samsung Display (South Korea), Sungkyunkwan University

OpenAlex ID: A5110045339

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

2009 · Chang-Jung Kim, Sangwook Kim, et al. · Applied Physics Letters · 230

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

2012 · Seung‐Eon Ahn, Ihun Song, et al. · Advanced Materials · 174

Persistent photoconductivity in Hf–In–Zn–O thin film transistors

2010 · Khashayar Ghaffarzadeh, Arokia Nathan, et al. · Applied Physics Letters · 156

Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

2010 · Khashayar Ghaffarzadeh, Arokia Nathan, et al. · Applied Physics Letters · 130

An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors

2010 · Woong-Sun Kim, Yeon-Keon Moon, et al. · Thin Solid Films · 98

Effect of film thickness and annealing temperature on hillock distributions in pure Al films

2006 · Soo-Jung Hwang, Je-Hun Lee, et al. · Scripta Materialia · 79

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

2011 · Sungchul Kim, Yong Woo Jeon, et al. · IEEE Electron Device Letters · 76

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

2010 · Yong Woo Jeon, Sungchul Kim, et al. · IEEE Transactions on Electron Devices · 76

Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film Transistor

2011 · Jung-Ryoul Yim, Sung-Yup Jung, et al. · Japanese Journal of Applied Physics · 72

Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

2004 · K. Das, M. NandaGoswami, et al. · Applied Physics Letters · 63

Effect of the Liquid‐Forming Additive Content on the Kinetics of Abnormal Grain Growth in Alumina

2003 · Jung Hyuck Ahn, Je‐Hun Lee, et al. · Journal of the American Ceramic Society · 58

Effect of the Liquid‐Phase Characteristic on the Microstructures and Dielectric Properties of Donor‐ (Niobium) and Acceptor‐ (Magnesium) Doped Barium Titanate

2003 · Seok‐Hyun Yoon, Je‐Hun Lee, et al. · Journal of the American Ceramic Society · 57

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Core‐Shell Structure of Acceptor‐Rich, Coarse Barium Titanate Grains

2002 · Seok‐Hyun Yoon, Je‐Hun Lee, et al. · Journal of the American Ceramic Society · 54

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Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

2003 · R. Mahapatra, Je-Hun Lee, et al. · Applied Physics Letters · 43

Grain boundary crystallization during furnace cooling of α-SiC sintered with Y2O3–Al2O3–CaO

2005 · Je-Hun Lee, Doh-Yeon Kim, et al. · Journal of the European Ceramic Society · 40

Intergranular glassy phase free SiC ceramics retains strength at 1500 °C

2004 · Heon-Jin Choi, Young-Wook Kim, et al. · Scripta Materialia · 40

Anisotropy of grain boundary energies as cause of abnormal grain growth in electroplated copper films

2003 · Jong-Min Paik, Young-Joon Park, et al. · Scripta Materialia · 34

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

2014 · Jaeman Jang, Dae Geun Kim, et al. · Applied Physics Letters · 32

Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers

2003 · Je-Hun Lee, S. Maikap, et al. · Applied Physics Letters · 32

Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

2010 · Sungchul Kim, Yongwoo Jeon, et al. · IEEE Electron Device Letters · 26

Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates

2005 · S. Maikap, Je-Hun Lee, et al. · Solid-State Electronics · 23

Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping

2011 · Woong-Sun Kim, Yeon-Keon Moon, et al. · Thin Solid Films · 22

The Influence of the Hafnium Doping on Negative Bias Stability in Zinc Oxide Thin Film Transistor

2010 · Woong-Sun Kim, Yeon-Keon Moon, et al. · Electrochemical and Solid-State Letters · 22

?Characteristics of ZnO based TFT using La2O3 high-k dielectrics

2009 · Yeon-Keon Moon, Sih Lee, et al. · Journal of the Korean Physical Society · 22

The influence of hafnium doping on bias stability in zinc oxide thin film transistors

2011 · Woong-Sun Kim, Yeon-Keon Moon, et al. · Thin Solid Films · 20

Works count: 60

Citation count: 1,861

H-index: 22

I10-index: 34