Author

Shoyu Watanabe

Institution: Mitsubishi Electric (Japan)

Observed institution: Mitsubishi Electric (Japan)

OpenAlex ID: A5110045928

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs

2008 · Yukiyasu Nakao, Shoyu Watanabe, et al. · Materials science forum · 16

4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating

2009 · Naruhisa Miura, Shohei Yoshida, et al. · Japanese Journal of Applied Physics · 14

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Fabrication of carbon-nanotube field-emitter array using polymer insulator

2004 · Kunihiko Nishimura, Zhiying Shen, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

2012 · Shiro Hino, Naruhisa Miura, et al. · Materials science forum · 5

53.1: Fabrication of CNT Emitter Array with Polymer Insulator

2005 · Kunihiko Nishimura, Akihiko Hosono, et al. · SID Symposium Digest of Technical Papers · 3

An Oxide Cathode with Tungsten-film Coating

1999 · Hiroyuki Teramoto, Masato Saito, et al. · 電子情報通信学会技術研究報告. EID, 電子ディスプレイ · 1

A New LCD with an Input Function Using Conventional Electrodes for Both Display and Input

1987 · Masaaki Nakano, Shoyu Watanabe, et al. · IEEE Transactions on Consumer Electronics

Works count: 7

Citation count: 49

H-index: 4

I10-index: 3