Author

Christian Sandow

Observed names: C Sandow, C. Sandow

Institutions: Max Planck Society, Halbleiterlabor of the Max-Planck-Society

Observed institutions: University of Bonn, Infineon Technologies (Germany), Max Planck Society, Forschungszentrum Jülich, Purdue University West Lafayette, Jülich Aachen Research Alliance, PNSensor (Germany), Halbleiterlabor of the Max-Planck-Society, The University of Tokyo

OpenAlex ID: A5110050953

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

2009 · C. Sandow, J. Knoch, et al. · Solid-State Electronics · 128

Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL

2012 · M. Porro, L. Andricek, et al. · IEEE Transactions on Nuclear Science · 110

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

2011 · Joshua T. Smith, Christian Sandow, et al. · IEEE Transactions on Electron Devices · 51

$\Omega$-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

2012 · S. Richter, C. Sandow, et al. · IEEE Electron Device Letters · 48

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

2008 · M. Mueller, Q.T. Zhao, et al. · Materials Science and Engineering B · 42

The MOS-type DEPFET pixel sensor for the ILC environment

2006 · L. Andricek, P. Fischer, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 34

Progress towards a large area, thin DEPFET detector module

2007 · P. Fischer, L. Andricek, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 29

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

2010 · Christoph Urban, Mostafa Emam, et al. · IEEE Electron Device Letters · 26

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

2008 · M. Roeckerath, J. M. J. Lopes, et al. · Applied Physics A · 26

DEPFET, a monolithic active pixel sensor for the ILC

2007 · J.J. Velthuis, R. Kohrs, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 25

DEPFET active pixel sensor with non-linear amplification

2011 · P. Lechner, L. Andricek, et al. · IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) · 24

Clear-performance of linear DEPFET devices

2006 · C. Sandow, L. Andricek, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 21

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

2010 · C. Urban, C. Sandow, et al. · Solid-State Electronics · 19

Development of a prototype module for a DEPFET pixel vertex detector for a linear collider

2005 · R. Kohrs, L. Andricek, et al. · IEEE Transactions on Nuclear Science · 17

First test beam results on DEPFET pixels for the ILC

2006 · R. Kohrs, L. Reuen, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 16

Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays

2013 · C. Toechterle, F. Pfirsch, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 15

IGBT with superior long-term switching behavior by asymmetric trench oxide

2018 · C. Sandow, P. Brandt, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 14

Evolution of current filaments limiting the safe-operating area of high-voltage trench-IGBTs

2014 · C. Toechterle, F. Pfirsch, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 14

Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

2010 · C. Urban, M. Emam, et al. · Solid-State Electronics · 13

High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

2009 · C. Urban, M. Emam, et al. · European Solid-State Device Research Conference · 13

Schottky barrier height modulation by Arsenic Dopant segregation

2008 · C. Urban, Q.-T. Zhao, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 13

Performance of a DEPFET prototype module for the ILC vertex detector

2006 · L. Reuen, R. Kohrs, et al. · IEEE Transactions on Nuclear Science · 12

InSb nanowire field-effect transistors — Electrical characterization and material analysis

2009 · D. Candebat, Y. Zhao, et al. · Conference digest · 11

Modeling, fabrication and characterization of silicon tunnel field effect transistors

2011 · C. Sandow, S. Mantl · RWTH Publications (RWTH Aachen) · 10