Author

Kiyokazu Nakagawa

Observed names: K Nakagawa, K. Nakagawa, KIYOKAZU NAKAGAWA, Kiyokazu NAKAGAWA, Kiyokazu Nakagawa Kiyokazu Nakagawa

Observed institutions: IHI Corporation (United States), University of Tsukuba, Tokyo City University, IHI Corporation (Japan), IHI Corporation (United Kingdom), IHI Corporation (Germany), Hitachi Cable, Ltd. (Japan), The Institute for Solid State Physics, The University of Tokyo, Nagoya University, Hitachi (Japan), University of Yamanashi, The University of Tokyo

OpenAlex ID: A5110076398

Observation of dislocations in cadmium telluride by cathodoluminescence microscopy

1979 · K. Nakagawa, K. Maeda, et al. · Applied Physics Letters · 192

Reverse temperature dependence of Ge surface segregation during Si-molecular beam epitaxy

1991 · Kiyokazu Nakagawa, Masanobu Miyao · Journal of Applied Physics · 102

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

2017 · Shinya Takashima, Katsunori Ueno, et al. · Applied Physics Express · 91

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Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

2002 · T. Irisawa, S. Tokumitsu, et al. · Applied Physics Letters · 89

Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

1999 · Nobuyuki Sugii, Kiyokazu Nakagawa, et al. · Applied Physics Letters · 82

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

1991 · Masanobu Miyao, Eiichi Murakami, et al. · Journal of Crystal Growth · 74

Solid-phase crystallization of Si1−xGex alloy layers

2001 · S. Yamaguchi, N. Sugii, et al. · Journal of Applied Physics · 72

Influence of siliconizing on the oxidation behavior of a γ-TiAl based alloy

2003 · X.Y Li, S Taniguchi, et al. · Intermetallics · 70

Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si

1987 · Aart A. van Gorkum, Kiyokazu Nakagawa, et al. · Japanese Journal of Applied Physics · 62

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Growth and characterization of atomic layer doping structures in Si

1989 · A. A. van Gorkum, K. Nakagawa, et al. · Journal of Applied Physics · 61

Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

2019 · Ryo Tanaka, Shinya Takashima, et al. · Applied Physics Express · 58

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In-plane strain fluctuation in strained-Si/SiGe heterostructures

2003 · K. Sawano, S. Koh, et al. · Applied Physics Letters · 58

Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy

1989 · Kiyokazu Nakagawa, Aart A. van Gorkum, et al. · Applied Physics Letters · 55

Influence of substrate orientation on surface segregation process in silicon-MBE

1989 · Kiyokazu Nakagawa, Masanobu Miyao, et al. · Thin Solid Films · 52

Strain-controlled Si-Ge modulation-doped FET with ultrahigh hole mobility

1991 · E. Murakami, K. Nakagawa, et al. · IEEE Electron Device Letters · 51

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

2003 · T. Irisawa, M. Myronov, et al. · Applied Physics Letters · 50

Corrosion behavior of ferritic steels on the air sides of boiler tubes in a steam/air dual environment

2003 · Kiyokazu Nakagawa, Yasuo Matsunaga, et al. · Materials at High Temperatures · 46

Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices

1994 · Masanobu Miyao Masanobu Miyao, Kiyokazu Nakagawa Kiyokazu Nakagawa · Japanese Journal of Applied Physics · 45

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

2015 · K. Sawano, Y. Hoshi, et al. · Thin Solid Films · 43

Electron microscopy studies of the intermediate layers at the SiO 2 /GaN interface

2017 · Kazutaka Mitsuishi, Koji Kimoto, et al. · Japanese Journal of Applied Physics · 42

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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

2004 · K. Sawano, S. Koh, et al. · Applied Physics Letters · 42

Surface Planarization of Strain-Relaxed SiGe Buffer Layers by CMP and Post Cleaning

2003 · K. Sawano, K. Kawaguchi, et al. · Journal of The Electrochemical Society · 40

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Microstructure of Visible Light Emitting Porous Silicon

1992 · Akio Nishida, Kiyokazu Nakagawa, et al. · Japanese Journal of Applied Physics · 40

Activation analysis of plastic deformation of CdTe below room temperature

1978 · K. Maeda, K. Nakagawa, et al. · physica status solidi (a) · 39

Oxidation behavior of TiAl protected by Si+Nb combined ion implantation

2001 · X.Y Li, S Taniguchi, et al. · Intermetallics · 38

Works count: 316

Citation count: 3,430

H-index: 31

I10-index: 89