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Y. Itaya
Observed names:
Itaya Yoshio,
Y Itaya,
YOSHIO ITAYA,
Yoshio Itaya
Institution:
NTT (Japan)
Observed institutions:
Tokyo Institute of Technology,
NTT (Japan)
OpenAlex ID:
A5110076619
Observation of amplitude squeezing in a constant-current–driven semiconductor laser
1987
·
S. Machida
, Y. Yamamoto
, et al.
·
Physical Review Letters
·
391
110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength
1994
·
K. Kato
, A. Kozen
, et al.
·
IEEE Photonics Technology Letters
·
233
The temperature dependence of the threshold current of GaInAsP/InP DH lasers
1981
·
M. Asada
, A. Adams
, et al.
·
IEEE Journal of Quantum Electronics
·
158
Spot-size converted 1.3 µm laser with butt-jointedselectively grown vertically tapered waveguide
1995
·
Y. Tohmori
, Y. Suzaki
, et al.
·
Electronics Letters
·
94
CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region
1982
·
T. Matsuoka
, H. Nagai
, et al.
·
Electronics Letters
·
79
1.11-1.67 µm
1980
·
S. Arai
, Y. Suematsu
, et al.
·
IEEE Journal of Quantum Electronics
·
70
Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range
1987
·
Y. Kawamura
, K. Wakita
, et al.
·
IEEE Journal of Quantum Electronics
·
64
Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators
1986
·
Y. Kawamura
, K. Wakita
, et al.
·
Electronics Letters
·
63
Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
1997
·
H. Takeuchi
, K. Tsuzuki
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
60
High temperature operation with low-loss couplingto fibrefor narrow-beam 1.3 µm laserswith butt-jointed selective grown spot-size converter
1995
·
Y. Tohmori
, Y. Suzaki
, et al.
·
Electronics Letters
·
58
Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm
1979
·
Yoshio Itaya
, Yasuharu Suematsu
, et al.
·
Japanese Journal of Applied Physics
·
54
PDF
New 1.5 μm wavelength GaInAsp/InP distributed feedback laser
1982
·
Y. Itaya
, T. Matsuoka
, et al.
·
Electronics Letters
·
49
Tunable optical-wavelength conversion using a multielectrode distributed-feedback laser diode with a saturable absorber
1987
·
H. Kawaguchi
, K. Oe
, et al.
·
Electronics Letters
·
44
Longitudinal mode behaviors of 1.5 µm range GaInAsP/InP distributed feedback lasers
1984
·
Y. Itaya
, T. Matsuoka
, et al.
·
IEEE Journal of Quantum Electronics
·
42
NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser
1997
·
H. Takeuchi
, K. Tsuzuki
, et al.
·
IEEE Photonics Technology Letters
·
38
1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE Technique
1979
·
Shigehisa Arai
, Yasuharu Suematsu
, et al.
·
Japanese Journal of Applied Physics
·
36
PDF
Highly reliable 1.55 µm GaInAsP laser diodes buried with semi-insulating iron-doped InP
1994
·
S. Matsumoto
, M. Fukuda
, et al.
·
Electronics Letters
·
35
Phase control by coating in 1.56 µm distributed feedback lasers
1985
·
Y. Itaya
, K. Wakita
, et al.
·
IEEE Journal of Quantum Electronics
·
34
Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µm
1978
·
Shigehisa Arai
, Yoshio Itaya
, et al.
·
Japanese Journal of Applied Physics
·
33
PDF
Integrated external cavity laser composed of spot-sizeconvertedLD and UV written grating in silica waveguide on Si
1996
·
T. Tanaka
, H. Takahashi
, et al.
·
Electronics Letters
·
29
Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
1980
·
K. Kishino
, Y. Suematsu
, et al.
·
IEEE Journal of Quantum Electronics
·
28
Spot-size converter integrated laser diodes (SS-LDs)
1997
·
Y. Itaya
, Y. Tohmori
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
27
TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice
1991
·
M. Okamoto
, K. Sato
, et al.
·
IEEE Journal of Quantum Electronics
·
25
New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasers
1980
·
Shigehisa Arai
, Masahiro Asada
, et al.
·
Electronics Letters
·
24
Carrier Lifetime Measurement of GaInAsP/InP Double-Heterostructure Lasers
1977
·
Yoshio Itaya
, Yasuharu Suematsu
, et al.
·
Japanese Journal of Applied Physics
·
24
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Works count:
116
Citation count:
2,396
H-index:
24
I10-index:
53
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