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W. Jantsch

Optically active erbium centers in silicon
1996 · H. Przybylinska, W. Jantsch, et al. · Physical review. B, Condensed matter · 217
Spin Manipulation of Free Two-Dimensional Electrons in Si / SiGe Quantum Wells
2005 · A. M. Tyryshkin, S. A. Lyon, et al. · Physical Review Letters · 100
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Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
2011 · A. Bonanni, M. Sawicki, et al. · Physical Review B · 74
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Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template
2006 · Gang Chen, H. Lichtenberger, et al. · Physical Review B · 73
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Band structure and optical properties of InyGa1−yAs1−xNx alloys
2001 · C. Skierbiszewski, P. Perlin, et al. · Physical review. B, Condensed matter · 68
Suppression of spin relaxation of conduction electrons by cyclotron motion
2004 · Z. Wilamowski, W. Jantsch · Physical Review B · 65
Magnetic-Field-Induced Ferroelectric Polarization Reversal in the Multiferroic Ge1−xMnxTe Semiconductor
2014 · H. Przybylińska, G. Springholz, et al. · Physical Review Letters · 63
Characterization of deep levels in CdTe by photo-EPR and related techniques
1990 · W. Jantsch, G. Hendorfer · Journal of Crystal Growth · 56
Deep donor levels due to isolated Fe in CdTe
1985 · K. Lischka, G. Brunthaler, et al. · Journal of Crystal Growth · 55
On the local structure of optically active Er centers in Si
1995 · H. Przybylinska, G. Hendorfer, et al. · Applied Physics Letters · 51
Deep levels in semiconductors: A quantitative criterion
1982 · W. Jantsch, K. Wünstel, et al. · Physical review. B, Condensed matter · 47
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
2008 · M. Siekacz, A. Feduniewicz-Żmuda, et al. · Journal of Crystal Growth · 41
External quantum efficiency analysis of Si solar cells with II-VI nanocrystal luminescent down-shifting layers
2011 · R. Rothemund, S. Kreuzer, et al. · Energy Procedia · 39
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Different Er centres in Si and their use for electroluminescent devices
1998 · W. Jantsch, S. Lanzerstorfer, et al. · Journal of Luminescence · 37
Density of states of grain boundaries in silicon
1982 · J. Werner, W. Jantsch, et al. · Solid State Communications · 36
On the environment of optically active Er in Si-electroluminescence devices
1998 · S. Lanzerstorfer, L. Palmetshofer, et al. · Applied Physics Letters · 33
Dielectric properties and soft modes in semiconducting (Pb, Sn, Ge)Te
1983 · W. Jantsch · Springer tracts in modern physics · 33
Spin dynamics in the mixed-valence compound HgSe:Fe
1988 · Z. Wilamowski, A. Mycielski, et al. · Physical review. B, Condensed matter · 31
Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)
2008 · M. Brehm, M. Grydlik, et al. · Applied Physics Letters · 30
Magnetic properties of a new spintronic material—GaN:Fe
2005 · H. Przybylińska, A. Bonanni, et al. · Materials Science and Engineering B · 30
Direct excitation spectroscopy of Er centers in porous silicon
1997 · M. Stepikhova, W. Jantsch, et al. · Applied Physics Letters · 29
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
1998 · W. Jantsch, Z. Wilamowski, et al. · physica status solidi (b) · 28
Enhancement of the in-plane effective mass of electrons in modulation-doped Inx Ga1−x As quantum wells due to confinement effects
1993 · G. Hendorfer, M. Seto, et al. · Physical review. B, Condensed matter · 26
Optical properties of a single Er center in GaN
2005 · V. Glukhanyuk, H. Przybylińska, et al. · Optical Materials · 25
Anomalies of the refractive index and the optical energy gap of ferroelectric Pb1?x Ge x Te
1980 · W. Jantsch · The European Physical Journal B · 23
Works count: 151
Citation count: 1,935
H-index: 24
I10-index: 47
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