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W.B. de Boer

Observed names: W De Boer, W. B. Boer, W. B. De Boer, W. B. de Boer, W. D. de Boer, W. De Boer, W. de Boer, W.B De Boer, W.B de Boer, W.B. De Boer, Wie Be de Boer, Wiebe B. De Boer, Wiebe B. de Boer, Wiebe D. de Boer, Wiebe De Boer, Wiebe de Boer
ORCID: 0000-0001-8403-4790
Observed ORCID: 0000-0001-8403-4790
OpenAlex ID: A5110107971
Diffusion in strained Si(Ge)
1994 · N. E. B. Cowern, P. C. Zalm, et al. · Physical Review Letters · 248
Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
1991 · W. B. de Boer, D. J. Meyer · Applied Physics Letters · 85
Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility
2014 · Lis K. Nanver, Lin Qi, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 74
QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz
2003 · P. Deixler, R. Colclaser, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 62
On the optimization of SiGe-base bipolar transistors
1996 · R.J.E. Hueting, J.W. Slotboom, et al. · IEEE Transactions on Electron Devices · 55
High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy
2012 · Agata Sakic, Gerard van Veen, et al. · IEEE Transactions on Electron Devices · 43
QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications
2004 · P. Deixler, A. Rodriguez, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 41
Temperature dependence of chemical-vapor deposition of pure boron layers from diborane
2012 · V. Mohammadi, W. B. de Boer, et al. · Applied Physics Letters · 38
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection
2010 · A. Sakic, L. K. Nanver, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38
VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 $^{\circ}{\rm C}$ PureB Deposition
2013 · Vahid Mohammadi, Lin Qi, et al. · IEEE Electron Device Letters · 32
Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems
2002 · A. Pruijmboom, D. Terpstra, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Characterization of epitaxial layers by the depth dependence of boron diffusivity
1992 · K. J. van Oostrum, P. C. Zalm, et al. · Applied Physics Letters · 31
Facts and artefacts in the characterization of Si/SiGe multiayers with SIMS
1991 · P. C. Zalm, C. J. Vriezema, et al. · Surface and Interface Analysis · 30
Secondary ion mass spectroscopy resolution with ultra-low beam energies
1996 · J. B. Clegg, N. S. Smith, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 28
High hole mobilities in fully-strained Si/sub 1-x/Ge/sub x/ layers (0.3>x>0.4) and their significance for SiGe pMOSFET performance
2001 · R.J.P. Lander, Y. V. Ponomarev, et al. · IEEE Transactions on Electron Devices · 27
Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon
2001 · G. Mannino, P. A. Stolk, et al. · Applied Physics Letters · 26
Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces
2014 · V. Mohammadi, N. Golshani, et al. · Microelectronic Engineering · 23
An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane
2012 · V. Mohammadi, W. B. de Boer, et al. · Journal of Applied Physics · 23
(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices
2012 · L. K. Nanver, A. Sammak, et al. · ECS Transactions · 21
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A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths
2011 · Amir Sammak, Mahdi Aminian, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Explorations for high performance SiGe-heterojunction bipolar transistor integration
2002 · P. Deixler, H.G.A. Huizing, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 17
Selective versus non-selective growth of Si and SiGe
1999 · W.B De Boer, D Terpstra, et al. · Materials Science and Engineering B · 17
Pure-boron chemical-vapor-deposited layers: A new material for silicon device processing
2010 · L.K. Nanver, T. L. M. Scholtes, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 16
Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3<x<0.4) grown on Si
2000 · R. J. P. Lander, Y. V. Ponomarev, et al. · Journal of Applied Physics · 15
Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition
2012 · V. Mohammadi, W. B. de Boer, et al. · ECS Journal of Solid State Science and Technology · 14
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Works count: 89
Citation count: 1,286
H-index: 20
I10-index: 32
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